Dual-Composition Passivation Layer for Blocking Stability

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Solution Overview

Problem

Conventional passivation layers in semiconductor devices face challenges in providing effective protection against impurities and contaminants, particularly in humid environments and strong electrical fields, which can lead to charge accumulation and reduced blocking capability.

Innovation Solution

A semiconductor device with a passivation layer comprising a silicon-rich first portion and a nitrogen-rich second portion, where the first portion is between the semiconductor body and the second portion, forming strong bonds and preventing charge accumulation, and the second portion provides rugged protection against humidity and electrochemical corrosion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional passivation layer is used, then the semiconductor device is protected during testing and packaging, but charge accumulation occurs in humid environments leading to reduced blocking capability

Engineering Contradiction:

Improveblocking capabilityVSAvoidcharge accumulation

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The passivation layer is divided into multiple portions with different silicon contents. The first portion has higher silicon content than the second portion, creating distinct functional regions that address different protection needs and prevent charge accumulation while maintaining blocking capability.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different portions of the passivation layer are assigned different local compositions tailored to specific functions. The silicon-rich first portion provides electrical stability and prevents charge accumulation, while the second portion provides general protection, with each region optimized for its specific role.

Inventive Principle:

Principle #3Local quality

2Reliability

If a passivation layer with high silicon content is used, then adhesion and electrical stability are improved, but protection against humidity and electrochemical corrosion is reduced

Engineering Contradiction:

ImproveadhesionVSAvoidhumidity protection

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The passivation layer is segmented into a silicon-rich first portion for adhesion and electrical stability, and a silicon-poor second portion for humidity and corrosion protection, allowing each segment to optimize its specific function without compromise.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The passivation layer uses a composite structure with varying silicon content across different portions. This composite approach combines the advantages of silicon-rich regions (adhesion, electrical stability) with silicon-poor regions (humidity resistance, corrosion protection) in a single integrated layer.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively prevents charge accumulation and maintains high electrical blocking capability, ensuring the semiconductor device's stability and performance even in harsh conditions, with improved adhesion and mechanical strength.

Implementation Method 1

the first portion forms strong bonds and preventing charge accumulation

Methodology Applied

Scientific EffectChemical bonding: Chemical Bonding

Implementation Method 2

forms a barrier against impurities and contaminants that otherwise may migrate from the ambient into active regions

Methodology Applied

Scientific EffectPhysical barrier: Physical Containment

Data Source

PatentUS11804415B2Semiconductor device with first and second portions that include silicon and nitrogen

Publication Date: 2023.10.31 INFINEON TECHNOLOGIES AG

AI summary

A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.