Passivation Layer Structure for Antenna-Safe Conductive Pads
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Solution Overview
Problem
As technology nodes decrease, the pitch between conductive pads in semiconductor devices decreases, leading to increased risk of oxidation and antenna effect due to charged particles generated during high density plasma chemical vapor deposition (HDPCVD) of passivation layers, which can damage active components.
Innovation Solution
A dielectric layer with lower conformity is deposited over the conductive pads using a process that generates few charged particles, followed by a higher conformity passivation layer using HDPCVD to act as a barrier, reducing charge accumulation and protecting the pads from oxidation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If HDPCVD is used to deposit passivation layers, then the conformity and uniform thickness of the passivation layer is improved, but charged particles are generated that can damage active components through the antenna effect
Solution Approach 1:
A dielectric layer is introduced as an intermediary barrier between the conductive pads and the passivation layer. This dielectric layer blocks charged particles generated during HDPCVD from reaching the conductive pads, thereby preventing the antenna effect while allowing the HDPCVD process to continue for high-quality passivation layer deposition.
Solution Approach 2:
The protective structure is segmented into multiple layers: a dielectric layer deposited first to provide charged particle blocking, followed by the passivation layer deposited via HDPCVD to provide oxidation protection. This segmentation allows each layer to perform its specific function without compromising the other.
2Productivity
If the pitch between conductive pads is decreased to increase device density, then more devices can be integrated, but the risk of oxidation and antenna effect increases
Solution Approach 1:
The dielectric layer serves as a protective intermediary that enables closer spacing of conductive pads by blocking harmful charged particles. This allows the pitch to be reduced for higher device density while maintaining protection against both antenna effect and oxidation.
Solution Approach 2:
The dielectric layer is deposited in advance before the passivation layer, establishing a protective barrier prior to exposure to charged particles during subsequent processing steps. This preliminary action prevents damage before it can occur.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric layer effectively prevents charged particles from reaching the conductive pads, minimizing antenna effect and reducing damage to active devices, while maintaining protection against oxidation.
Implementation Method 1
A dielectric layer that is over the conductive pad and that prevents charged particles from reaching the conductive pad
Implementation Method 2
In order to reduce the risk of oxidation of the conductive pads, passivation layers are deposited over the conductive pads
Implementation Method 3
HDPCVD generates charged particles
Implementation Method 4
high density plasma chemical vapor deposition process (HDPCVD)
Data Source
AI summary
A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device further includes a dielectric layer over the conductive pad, wherein the dielectric layer has a first conformity. The semiconductor device further includes a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity different from the first conformity.