Passivation Layer for Semiconductor Light Emitting Devices
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in preventing contamination and mechanical stress during substrate removal, leading to potential device failure and performance degradation due to inadequate support and adhesion of underfill materials.
Innovation Solution
A passivation layer, which can be a dielectric layer or multilayer stack, is applied to the semiconductor light emitting devices to prevent contaminants and improve adhesion of underfill materials, enhancing the structural support and reliability of the devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If underfill material is injected to support the epitaxial structure during substrate removal, then mechanical support is improved, but adhesion between underfill and semiconductor structure may be insufficient leading to potential delamination
Solution Approach 1:
A passivation layer is introduced as an intermediary between the semiconductor light emitting device and the underfill material. This passivation layer serves as a bonding interface that enhances adhesion between the semiconductor structure and underfill, preventing delamination while maintaining mechanical support during substrate removal and subsequent processing steps.
2Ease of operation
If the epitaxial structure is exposed during substrate removal, then access for mounting is improved, but the structure becomes vulnerable to mechanical stress and cracking
Solution Approach 1:
The passivation layer is applied beforehand to the exposed epitaxial structure before mounting operations. This protective layer cushions the vulnerable semiconductor structure against mechanical stress and cracking that may occur during substrate removal and subsequent mounting processes, while still allowing access for interconnect formation and device assembly.
3Ease of manufacture
If the semiconductor structure is exposed without protection, then manufacturing process access is improved, but contamination from the environment can reach the devices
Solution Approach 1:
The passivation layer acts as a protective intermediary barrier between the exposed semiconductor light emitting device and the external environment. This layer prevents contamination from reaching the sensitive epitaxial structure during mounting and packaging operations, while still allowing necessary process access for interconnect formation and device assembly.
Data Source
AI summary
In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.