Passivation Layer for Semiconductor Substrate Dry Strip
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Solution Overview
Problem
Current dry strip processes for semiconductor substrates, such as FinFET technology, cause damage and loss of silicon (Si) and silicon-germanium (SiGe) films due to reactive radicals, leading to oxidation and performance deterioration, necessitating reduced material loss during photoresist and residue removal.
Innovation Solution
A method involving the formation of a passivation layer using radicals generated in a first plasma, followed by a surface treatment process with a second plasma, where the passivation layer protects the substrate from damage during the dry strip process, utilizing a separation grid assembly to filter charged particles and allow neutral radicals to treat the workpiece, with specific gas mixtures and conditions to minimize Si/SiGe loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a plasma dry strip process is used to remove photoresist and residues, then photoresist and residue removal is achieved, but damage and loss of Si/SiGe films occurs due to reactive radicals
Solution Approach 1:
A passivation layer is formed on the Si/SiGe film surface before the plasma dry strip process. This preliminary protective layer prevents direct contact between reactive radicals and the Si/SiGe film, thereby preventing material loss while still allowing the subsequent plasma process to effectively remove photoresist and residues.
Solution Approach 2:
The passivation layer acts as an intermediary between the reactive radicals from the plasma and the Si/SiGe film. It absorbs the harmful effects of the radicals while permitting the plasma process to proceed and accomplish photoresist removal, thus mediating between the need for effective stripping and the need to protect the underlying film.
2Productivity
If a plasma dry strip process is used to remove photoresist and residues, then photoresist and residue removal is achieved, but oxidation of Si/SiGe films occurs leading to performance deterioration
Solution Approach 1:
The passivation layer is deposited beforehand to create a protective barrier that prevents oxidation of the Si/SiGe film during the plasma dry strip process. This preliminary protective measure eliminates the harmful oxidation effect while maintaining the effectiveness of the photoresist removal process.
Solution Approach 2:
The passivation process, which might seem like an additional step, actually converts the potentially harmful plasma environment into a beneficial protective atmosphere by forming a stable oxide layer that prevents further oxidation damage to the Si/SiGe film during processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces surface damage and material loss during dry strip processes, maintaining the integrity of Si/SiGe films and preserving device performance by forming a protective passivation layer that shields the substrate from reactive species, allowing for efficient removal of photoresists and residues with minimal Si/SiGe loss.
Implementation Method 1
forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber
Implementation Method 2
The processing chamber can be separated from a plasma chamber by a separation grid assembly
Implementation Method 3
forming a protective passivation layer that shields the substrate from reactive species
Data Source
AI summary
Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.