Heterogeneous Passivation Structure for Low-Noise Embedded Traces
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor packages face issues of excess cost, decreased reliability, and large package sizes, leading to inadequate performance.
Innovation Solution
The use of a heterogeneous passivation structure with high-resolution and high-function insulating materials, such as high-resolution polyimide, interleaved in semiconductor devices to form embedded traces, inhibiting signal noise and electromagnetic interference, and enhancing electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor packages are used, then manufacturing cost is reduced, but reliability decreases and electrical performance deteriorates due to signal noise and electromagnetic interference
Solution Approach 1:
The passivation structure is segmented into multiple layers with different functions: a first passivation layer for basic insulation and a second passivation layer with high-resolution material for precise trace formation and noise inhibition. This segmentation allows each layer to optimize for its specific function, improving overall reliability while maintaining manufacturing feasibility through standardized layering processes
Solution Approach 2:
The patent employs composite passivation structures combining different dielectric materials with complementary properties. The first passivation layer provides mechanical protection and basic insulation, while the second passivation layer uses high-resolution material to suppress signal noise and electromagnetic interference. This composite approach enhances reliability without requiring complete redesign of the manufacturing process
2Reliability
If heterogeneous passivation structures with high-resolution materials are used, then electrical performance improves by reducing signal noise, but device complexity increases
Solution Approach 1:
The second passivation layer is selectively applied in regions where high-resolution trace formation and noise suppression are critical, such as over signal traces and interconnects. This localized application of high-performance material improves electrical performance in key areas without unnecessarily increasing complexity across the entire device structure
Solution Approach 2:
The heterogeneous passivation structure is integrated within the existing semiconductor package architecture, with the second passivation layer nested within or adjacent to the first passivation layer. This nesting approach incorporates advanced functionality without requiring separate external structures, thereby limiting the increase in overall device complexity
3Reliability
If heterogeneous passivation structures with high-resolution and high-function insulating materials are used, then electrical performance improves by reducing signal noise and electromagnetic interference, but package size increases
Solution Approach 1:
The patent addresses electrical performance issues by adding vertical layering of passivation materials rather than expanding horizontal trace spacing. The heterogeneous passivation structure stacks functional layers in the vertical dimension, enabling noise suppression and high-resolution routing without increasing the lateral footprint of the package
4Manufacturing precision
If heterogeneous passivation structures with high-resolution materials are used, then manufacturing precision improves for high-resolution traces, but ease of manufacture decreases
Solution Approach 1:
The first passivation layer is formed and processed before applying the second passivation layer with high-resolution material. This preliminary action establishes a stable foundation and allows the high-resolution material to be applied under optimized conditions, achieving precise trace formation while managing manufacturing complexity through sequential processing
Data Source
AI summary
In one example, an electronic device can comprise a substrate, a first passivation structure over the substrate and defining a first opening, and a first conductive pattern formed in the first opening. A second passivation structure can be disposed over the first conductive pattern and the first passivation structure. The second passivation structure can include a high-resolution material and a high-function material. The high-resolution material of the second passivation structure can define a second opening. A second conductive pattern can be disposed in the second opening of the second passivation structure. The high-function material can be disposed between the first conductive pattern and the second conductive pattern. Other examples and related methods are also disclosed herein.


