Integrated Passive Die Arrays for Configurable Wafer Segmentation
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Solution Overview
Problem
Conventional integrated passive device (IPD) dies have fixed sizes and electrical properties, limiting circuit design flexibility and fabrication options.
Innovation Solution
The development of integrated passive device dies with varying sizes and numbers, achieved by dicing semiconductor wafers to create a plurality of IPD dies with different configurations, allowing for greater design and fabrication flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional integrated passive device dies are used with fixed sizes and electrical properties, then manufacturing process is simple, but circuit design flexibility is limited
Solution Approach 1:
The patent segments a semiconductor wafer containing multiple integrated passive devices into multiple separate dies of different sizes. By dividing the wafer along scribe lines that pass between devices, the system creates customizable die configurations (e.g., single-device dies, multi-device dies) from a single wafer, enabling circuit designers to select precise die sizes and device combinations without requiring separate fabrication processes for each configuration.
Solution Approach 2:
The patent introduces dynamic flexibility into the previously static die configuration process. Instead of fabricating fixed-size dies with specific device combinations, the system allows dynamic selection of die sizes and device inclusions after wafer fabrication by strategically placing scribe lines. This enables adaptive customization of die configurations based on specific circuit design requirements while maintaining a single fabrication process.
2Productivity
If multiple fixed-size IPD dies are manufactured separately, then each die has consistent electrical properties, but fabrication efficiency decreases
Solution Approach 1:
The patent merges multiple integrated passive devices onto a single semiconductor wafer using standard fabrication processes, treating them as part of a unified manufacturing batch. This approach maintains consistent electrical properties across all devices since they are fabricated simultaneously under identical conditions, while dramatically improving fabrication efficiency by producing multiple die configurations from one wafer instead of requiring separate fabrication runs for each die type.
Solution Approach 2:
The patent performs preliminary fabrication of all integrated passive devices on the wafer before any segmentation occurs. By completing all device formation, interconnect creation, and electrical characterization on the full wafer first, the system ensures that all devices receive identical fabrication treatment, guaranteeing electrical property consistency. The segmentation into different die sizes then occurs as a post-fabrication step that does not affect the already-established electrical characteristics.
3Adaptability or versatility
If semiconductor wafer is diced to create various IPD dies, then design flexibility is enhanced, but manufacturing complexity increases
Solution Approach 1:
The patent creates a universal wafer fabrication process that can produce multiple die configurations simultaneously. The same fabrication steps (device formation, interconnect creation, passivation) are applied universally across the entire wafer, and the single wafer serves multiple functions by yielding different die sizes and device combinations based solely on where scribe lines are placed. This universal approach eliminates the need for separate fabrication processes for each die configuration.
Solution Approach 2:
The patent uses the semiconductor wafer as a master template or copy source that can be segmented into multiple identical or varied die configurations. By fabricating all devices on the wafer first and then copying them into different die arrangements through dicing, the system achieves configuration variety without repeating the complex fabrication process for each die type. The wafer acts as a master copy from which multiple die versions are derived through simple physical segmentation.
Data Source
AI summary
A method of fabricating integrated passive device dies includes forming a first plurality of integrated passive devices on a substrate, forming a plurality of micro-bumps on the first plurality of integrated passive devices such that the plurality of micro-bumps act as electrical connections to the integrated passive devices, and dicing the substrate to form an integrated passive device die including a second plurality of integrated passive devices. The micro-bumps may be formed in an array or staggered configuration and may have a pitch that is in a range from 20 microns to 100 microns. The integrated passive devices may each include a seal ring and the integrated passive device die may have an area that is a multiple of an integrated passive device area. The method may further include dicing the substrate in various ways to generate integrated passive device dies having different sizes and numbers of integrated passive devices.


