Passive RF Coupling Circuit for DC Bias Generation
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Solution Overview
Problem
Existing plasma processing systems for semiconductor manufacturing require external RF or DC power sources to adjust voltage and DC potential on electrodes, which are expensive and increase operational costs.
Innovation Solution
A passive RF coupling circuit is used to adjust RF impedance and DC bias potential on an electrode with a path to DC ground, eliminating the need for external power supplies by employing a conductive coupling member and variable impedance/resistance components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If external RF or DC power sources are used to adjust voltage and DC potential on electrodes, then plasma processing parameter control is improved, but device complexity and operational cost increase
Solution Approach 1:
The patent extracts the DC voltage generation function from external power sources and relocates it to the plasma processing chamber itself. The conductive coupling member and insulator combination creates an internal DC bias mechanism that eliminates the need for separate external DC power supplies while maintaining control over plasma processing parameters.
Solution Approach 2:
The RF power source performs multiple functions: it provides RF power for plasma generation and simultaneously creates DC bias on the electrode through the conductive coupling member and insulator arrangement. This multi-functionality eliminates the need for separate DC power sources and reduces overall system complexity.
2Manufacturing precision
If external power sources are employed to control plasma parameters, then plasma density and ion energy control is improved, but manufacturing cost increases
Solution Approach 1:
The RF power source simultaneously provides plasma generation and DC bias control, eliminating the need for separate DC power supplies. This reduces equipment purchase costs and operational expenses while maintaining precise control over plasma density and ion energy through the internal DC bias mechanism.
Solution Approach 2:
The system uses its own RF power source to generate the DC bias voltage needed for plasma control, rather than requiring external DC power supplies. The conductive coupling member and insulator arrangement allows the RF system to self-generate the necessary DC potential difference, reducing overall system cost.
3Adaptability or versatility
If multiple power sources are used for electrode voltage control, then plasma processing flexibility is improved, but system complexity and operational cost increase
Solution Approach 1:
The RF power source is configured to perform multiple functions: generating RF power for plasma creation and creating DC bias on electrodes through the conductive coupling member and insulator arrangement. This single-source multi-functionality maintains plasma processing flexibility while reducing the number of required power sources and simplifying system operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for precise control of plasma processing parameters like plasma density, ion energy, and chemistry without external power sources, reducing costs while maintaining control over plasma processing.
Implementation Method 1
coupling a passive radio frequency (RF) circuit to the second electrode
Implementation Method 2
employing a conductive coupling member
Implementation Method 3
The power from RF generator 120 tends to interact with a gas to ignite plasma
Implementation Method 4
RF generator 120 with a path to ground may supply a low RF bias power to lower electrode 106
Data Source
AI summary
A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.