Low-Profile Patch Antenna with Via Grounding for High Gain

The patent employs asymmetric positioning of the feed line at the edge of the rectangular patch rather than center-fed configuration. This asymmetric feeding creates an imbalance that enhances the radiation pattern in the horizontal plane, improving gain distribution. Additionally, the rectangular patch geometry itself introduces asymmetry in the current distribution, which optimizes the radiation characteristics and increases horizontal plane gain compared to symmetric configurations.

The patent optimizes the dimensions of the rectangular patch (length and width ratios), the thickness of the dielectric substrate, and the position of the feed line to achieve desired impedance matching and radiation patterns. By carefully adjusting these parameters, the antenna achieves both low profile height and improved gain in the horizontal plane, resolving the contradiction between compact size and radiating performance.

The patent divides the grounding structure into discrete via holes positioned at specific locations around the patch perimeter rather than using a continuous ground connection. This segmentation allows the ground to be established at critical points for bandwidth enhancement while avoiding the complexity of a complete ground plane connection, thereby achieving bandwidth improvement with minimal additional structural complexity.

The patent uses a limited number of via holes (exactly four rows with specific spacing) rather than a dense array or complete ground connection. This partial action approach provides sufficient bandwidth enhancement through the shorting effect at critical current maxima locations without the excessive complexity and material usage that would result from more extensive via arrangements.