Pattern Decomposition Lithography for Uniform Corners and Tight Pitch
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Solution Overview
Problem
Conventional pattern splitting processes in integrated circuit design face challenges such as corner rounding variation, inability to pattern narrow isolated lines and spaces in two steps, and complications with tight pitch lithography patterns, leading to impaired electrical properties and restrictive design rules.
Innovation Solution
The technique involves decomposing a two-dimensional target lithography feature into multiple unidirectional target features, which are then grouped and represented using a series of reticles. This approach allows for consistent corner rounding and the ability to pattern features with right angles, while also enabling the simultaneous patterning of narrow isolated lines and spaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional pattern splitting processes are used, then lithography patterning can be performed, but corner rounding variation occurs and manufacturing precision deteriorates
Solution Approach 1:
The patent decomposes complex two-dimensional target lithography features into multiple simpler unidirectional target features. This segmentation allows each feature to be patterned independently with consistent corner rounding, eliminating the corner rounding variation that occurs in conventional pattern splitting processes while maintaining manageable process complexity.
Solution Approach 2:
The patent applies different patterning approaches to different regions of the lithography target. By identifying and separately processing features based on their geometric characteristics (unidirectional vs. bidirectional), the method ensures that each region receives the appropriate patterning treatment, resulting in uniform corner rounding across all features.
2Manufacturing precision
If conventional two-step patterning is used, then narrow isolated lines and spaces can be patterned, but the process window is limited and manufacturing precision is reduced
Solution Approach 1:
The patent segments the patterning process into multiple specialized steps, each optimized for specific feature types. This allows narrow isolated lines and spaces to be patterned with high precision while expanding the overall process window to accommodate various feature geometries that would be difficult to pattern using conventional two-step methods.
Solution Approach 2:
The patent transitions from conventional two-dimensional pattern splitting to a multi-dimensional approach by decomposing features into unidirectional components and processing them through specialized patterning steps. This dimensional transformation enables better control over critical dimensions and expands the process window for patterning narrow isolated lines and spaces.
3Area of moving object
If tight pitch lithography patterns are used, then integration density is improved, but design rules become more restrictive and device complexity increases
Solution Approach 1:
The patent decomposes tight pitch lithography patterns into unidirectional target features that can be patterned with relaxed design rules. By segmenting the overall pattern into simpler components, the method achieves high integration density while reducing the complexity of individual design rules applied to each feature.
Solution Approach 2:
The patent changes the geometric parameters of the target features from complex two-dimensional shapes to simpler unidirectional forms. This parameter transformation allows tight pitch patterns to be realized with reduced design rule complexity, as the decomposed features can be patterned using more straightforward lithography parameters.
Data Source
AI summary
Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.