Pattern Formation Material with Metal-Compound Absorption
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Solution Overview
Problem
Current pattern formation methods and materials face challenges in increasing productivity, particularly in achieving high etching resistance and precision in nanoimprint lithography, due to limitations in the diffusion and penetration of metal compounds within the pattern formation material films.
Innovation Solution
A pattern formation material comprising a first monomer with a molecular chain of 6 or more carbon or oxygen elements in a straight chain configuration, which forms an ester bond and absorbs a metal compound, enhancing etching resistance through the formation of an oxide layer during processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional pattern formation materials are used, then the basic pattern formation function is achieved, but the etching resistance is insufficient and productivity is low
Solution Approach 1:
The patent changes the chemical composition parameters of the pattern formation material by incorporating specific monomers with carboxyl groups and controlling the number of carbon atoms in the molecular chain (6 or more). This parameter optimization enables both high etching resistance through metal compound absorption and maintains productivity by ensuring proper film formation and processing characteristics
Solution Approach 2:
The patent creates a composite material system where the pattern formation material combines organic monomers with specific molecular structures and inorganic metal compounds. The metal compounds (such as aluminum, titanium, or tungsten-based compounds) are absorbed into the organic film, forming a composite structure that provides both the pattern formation capability and enhanced etching resistance
2Reliability
If the molecular chain length is increased to improve metal compound absorption, then etching resistance improves, but the film formation and processing may become difficult
Solution Approach 1:
The patent optimizes the molecular chain length parameter to be 6 or more carbon atoms, which is sufficient to enable metal compound absorption and improve etching resistance, while remaining within a range that maintains good film formation properties and processing ease. This balanced parameter selection resolves the contradiction between absorption capability and manufacturability
Solution Approach 2:
The patent introduces specific functional groups (carboxyl groups) at specific positions within the molecular chain. This local functionalization allows the material to have different properties at different locations: the carboxyl groups provide metal compound absorption sites for high etching resistance, while the overall molecular chain structure maintains film formation ease
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly improves etching resistance and patternability by allowing better penetration and distribution of metallic elements within the film, thereby increasing productivity and precision in pattern formation processes.
Implementation Method 1
a film including the first monomer is caused to absorb a metal compound including a metallic element
Implementation Method 2
enhancing etching resistance through the formation of an oxide layer during processing
Data Source
AI summary
According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.