Pattern Formation Using Segmented Organic Resist and SiO2 Mask
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Solution Overview
Problem
In semiconductor device manufacturing, the removal of residual resist layers using nano-imprinting methods can lead to thickness loss and dimensional changes in imprinted patterns, particularly affecting finer features, as the removal process can inadvertently etch projecting regions and cause pattern distortion.
Innovation Solution
A pattern forming method involving the formation of an organic layer with specific thickness and width regions, followed by the deposition of a silicon oxide mask layer in a reactive ion etching device, allows for selective etching of recessed regions while minimizing the impact on projecting regions, thereby maintaining pattern integrity during the removal process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the residual resist layer is removed by etching, then the recessed regions are cleared, but the projecting regions suffer thickness loss and dimensional changes
Solution Approach 1:
The resist layer is segmented into projecting regions and recessed regions with different thicknesses. The etching process is selectively applied to remove material from recessed regions while preserving projecting regions, achieving differential material removal based on spatial segmentation of the resist layer structure
Solution Approach 2:
Different regions of the resist layer are given different qualities (thicknesses). The projecting regions maintain their thickness while recessed regions are reduced to zero thickness through selective etching, creating local quality differences that enable precise pattern formation without overall thickness loss
2Manufacturing precision
If the residual resist layer is reduced to remove patterns, then the pattern definition improves, but the imprinted pattern dimensions change due to removal process
Solution Approach 1:
Instead of uniformly reducing the entire resist layer thickness, the method inverts the approach by selectively removing material only from recessed regions while preserving projecting regions. This inverted selective removal strategy maintains pattern dimensions in critical areas while achieving the necessary pattern definition
Solution Approach 2:
The resist layer is pre-formed with non-uniform thickness (projecting and recessed regions) before the etching process. This preliminary thickness variation is intentionally created during the imprinting stage, allowing the subsequent etching process to selectively act only on recessed regions without affecting projecting region dimensions
3Productivity
If the pattern is made finer, then the integration density increases, but the residual resist layer removal becomes more critical and problematic
Solution Approach 1:
For finer patterns, the segmentation of the resist layer into projecting and recessed regions becomes even more critical. The etching process selectively targets recessed regions between closely spaced projecting regions, enabling high integration density while maintaining pattern stability through precise selective material removal
Solution Approach 2:
In finer patterns, the local quality difference between projecting and recessed regions is amplified. The etching process exploits this local quality variation to remove material only where needed (recessed regions) while preserving the delicate projecting regions, enabling successful fabrication of high-density fine patterns
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents thickness and width reduction of projecting regions, ensuring pattern accuracy and stability, especially for finer features, while also shortening manufacturing time and improving yield by performing mask layer deposition and etching in the same process chamber.
Implementation Method 1
a second layer containing silicon oxide is formed on a surface of the organic layer in a process chamber of a reactive ion etching device
Implementation Method 2
etching the third region using the second layer as a mask in the process chamber
Data Source
AI summary
According to one embodiment, a pattern forming method includes forming an organic layer on a first layer. The organic layer has a first region having a first thickness and a first width, a second region having a second thickness and a second width, and a third region located between the first region and the second region. The third region has a third thickness less than each of the first thickness and the second thickness and a third width. A second layer containing silicon oxide is then formed on a surface of the organic layer in a process chamber of a reactive ion etching device. The third region is then etched in the process chamber using the second layer as a mask.