Pattern Formation Using Spacer Layers for Sub-Resolution Patterning
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Solution Overview
Problem
The increasing demand for smaller interconnection and isolation patterns in semiconductor manufacturing leads to a higher number of exposure processes in photolithography, increasing manufacturing costs due to the need for multiple exposure masks.
Innovation Solution
A pattern forming method using a 1D layout technology that involves forming three stacked layers with different etching selectivities, reducing the number of exposure processes by using a single exposure mask to form fine patterns smaller than the photolithography resolution limit, achieved through a film deposition apparatus with a rotatable turntable and air supply system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography technology is used to form fine patterns, then pattern miniaturization is achieved, but the number of exposure processes increases when patterns are smaller than the resolution limit
Solution Approach 1:
The pattern formation process is segmented into multiple stages: first forming a line pattern at resolution limit, then using spacer deposition and selective removal to create finer patterns. This segmentation allows achieving sub-resolution patterns without proportionally increasing exposure processes.
Solution Approach 2:
The invention transitions from two-dimensional photolithography patterns to three-dimensional structures by depositing spacer layers and performing selective etching. This dimensional transition enables pattern miniaturization while maintaining exposure process efficiency.
2Manufacturing precision
If the number of exposure processes is increased to form fine patterns, then pattern precision is improved, but manufacturing cost increases
Solution Approach 1:
The method performs preliminary actions by forming a line pattern at the resolution limit first, then using spacer deposition and selective removal to achieve finer patterns. This preliminary structuring reduces the need for multiple high-precision exposure processes, thereby lowering manufacturing costs.
Solution Approach 2:
Spacer layers serve as intermediary structures that enable pattern refinement without requiring additional exposure processes. The spacers act as self-aligned masks and structural elements that facilitate precise pattern formation at lower cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the reduction of exposure processes, thereby decreasing manufacturing costs and improving the efficiency of pattern formation, enabling the creation of fine patterns that are smaller than the photolithography resolution limit.
Implementation Method 1
An air supply unit is provided around the rotary unit and configured to supply air to the rotary unit to rotate the rotary unit
Implementation Method 2
a film deposition apparatus for sequentially supplying at least two reaction gases, which mutually react, into a chamber to deposit a film on a substrate
Data Source
AI summary
A first film having a repetitive line pattern is formed on an under film. A second film is formed on a side surface of the first film. The second film has an etching selectivity different from that of the first film. A third film is formed on an upper surface and a side surface of the second film. The third film has an etching selectivity different from those of the first and second films. A resist pattern with an opening is formed on the third film. A recess that exposes upper surfaces of the first, second and third films is formed by etching the third film by using the resist pattern as an etching mask. An upper surface of the under film is exposed by etching the first and third films. A through hole that penetrates through the under film is formed by etching the under film.