Pattern-Forming Method Using Diffusible Compound for Sub-90 nm Lithography
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Solution Overview
Problem
Current pattern-forming methods for electronic devices, such as semiconductor and liquid crystal devices, face challenges in achieving finer patterns due to limitations in lithography techniques, particularly in forming patterns with line widths smaller than 90 nm.
Innovation Solution
A pattern-forming method involving the formation of a prepattern on a substrate, followed by filling the surrounding area with a resin composition containing a diffusible compound, allowing the compound to diffuse into the prepattern, and then using a removing liquid to selectively remove undiffused portions, resulting in finer patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemical amplification type resist composition is used, then patterns with line width of about 90 nm can be formed, but still finer pattern formation is not achieved
Solution Approach 1:
The patent divides the pattern formation process into multiple stages: first forming a prepattern, then filling surrounding areas with resin composition, allowing compound diffusion into the prepattern, and finally selective removal. This segmentation enables achieving finer patterns beyond the limitations of conventional single-step lithography.
Solution Approach 2:
The patent performs preliminary actions by first forming a prepattern and filling the surrounding areas with resin composition containing diffusible compounds before the final pattern formation. This preliminary preparation enables subsequent selective diffusion and removal processes to achieve finer patterns.
2Manufacturing precision
If ArF excimer laser lithography is used, then patterns with line width of about 90 nm are enabled, but further miniaturization is limited
Solution Approach 1:
The patent changes the parameters of the pattern formation process by introducing compound diffusion and selective removal steps. By controlling diffusion time, temperature, and removal conditions, the method achieves sub-90 nm patterns that extend the adaptability of ArF excimer laser lithography for further miniaturization.
3Manufacturing precision
If chemical amplification type resist composition is used, then fine patterns can be formed using solubility difference, but the process cannot achieve smaller line widths
Solution Approach 1:
The patent introduces a diffusible compound as an intermediary that mediates between the prepattern and the removing liquid. This compound diffuses into the prepattern and creates solubility differences, enabling selective removal to achieve finer patterns while maintaining process feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of patterns with smaller widths than conventional methods, suitable for further miniaturization needs in electronic devices by altering the solubility of the prepattern and efficiently forming finer patterns using ArF excimer laser or similar technologies.
Implementation Method 1
a resin composition containing a compound (a) which is diffusible into the prepattern... the compound (a) is diffused into a part of the prepattern
Implementation Method 2
capable of forming patterns using the difference the rate of dissolution of a light-exposed site and that of a light-unexposed site
Data Source
AI summary
A pattern-forming method includes forming a prepattern on a substrate. A space other than a space in which the prepattern is formed on the substrate is filled with a resin composition containing a compound which is diffusible into the prepattern. The compound is diffused into a part of the prepattern. Portions in which the compound is undiffused in the prepattern are removed using a removing liquid.