Pattern-Forming Method for Lithography
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Solution Overview
Problem
Current methods for miniaturizing patterns in lithography processes, such as those used in semiconductor and liquid crystal device manufacturing, face challenges in achieving precise and smooth miniaturization while maintaining etching resistance and pattern uniformity.
Innovation Solution
A pattern-forming method involving the formation of a base pattern on a substrate, followed by application of a first composition containing a polymer with interacting groups, contact with a highly polar solvent, filling with a second composition capable of directed self-assembly, permitting phase separation, and removing phases to create a miniaturized pattern, which is then used as a mask for etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If directed self-assembly of block copolymer is used to form finer patterns, then pattern miniaturization is achieved, but pattern roughness increases and Critical Dimension Uniformity deteriorates
Solution Approach 1:
The patent divides the pattern formation process into multiple stages: first forming a base pattern with larger dimensions, then using directed self-assembly of block copolymer to create smaller features within the base pattern regions. This segmentation allows different parts of the structure to be optimized independently - the base pattern provides structural integrity while the self-assembled regions provide fine feature definition, thereby achieving miniaturization without sacrificing CDU
Solution Approach 2:
The patent applies different materials and processes to different regions of the substrate. The base pattern regions use conventional lithography materials and processes, while the miniaturized pattern regions use block copolymer directed self-assembly. This local differentiation allows each region to have optimal properties for its specific function, resolving the contradiction between overall pattern size and local feature uniformity
2Manufacturing precision
If conventional lithography is used to form patterns, then pattern uniformity is maintained, but further miniaturization becomes difficult
Solution Approach 1:
The patent introduces a base pattern as an intermediary structure that mediates between conventional lithography capabilities and block copolymer self-assembly. The base pattern serves as a template that guides the self-assembly process, enabling the formation of miniaturized features that would be difficult to achieve with conventional lithography alone, while maintaining overall pattern uniformity through the structured guidance provided by the base pattern
3Length of moving object
If block copolymer directed self-assembly is used for pattern formation, then finer patterns are achieved, but etching resistance decreases
Solution Approach 1:
The patent creates a composite structure combining the base pattern material with the block copolymer material. This composite structure leverages the strengths of both materials - the base pattern provides structural support and etching resistance, while the block copolymer regions enable fine feature formation through self-assembly. The composite nature of the structure allows simultaneous achievement of miniaturization and maintained etching resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of miniaturized patterns with reduced roughness and improved Critical Dimension Uniformity (CDU), suitable for advanced microfabrication processes in semiconductor devices and other applications.
Implementation Method 1
The first polymer includes on at least one end of a main chain thereof a group capable of interacting with the base pattern
Implementation Method 2
A surface of the coating is contacted with a highly polar solvent
Implementation Method 3
The second polymer is capable of forming a phase separation structure through directed self-assembly
Implementation Method 4
Phase separation is permitted in the second composition to form phases after the filling of the second composition
Data Source
AI summary
A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate. A first composition is applied on lateral faces of the recessed portions of the base pattern, to form a coating. The first composition includes a first polymer which includes on at least one end of a main chain thereof a group capable of interacting with the base pattern. A surface of the coating is contacted with a highly polar solvent. The recessed portions are filled with a second composition. The second composition includes a second polymer which is capable of forming a phase separation structure through directed self-assembly. Phase separation is permitted in the second composition to form phases. A part of the phases is removed to form a miniaturized pattern. The substrate is etched directly or indirectly using the miniaturized pattern as a mask.