Pattern Forming Material for Semiconductor Mask Etch Resistance
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Solution Overview
Problem
In semiconductor device manufacturing, there is a need for a pattern forming material with high etch resistance to withstand prolonged exposure to etching gases, as existing technologies fail to provide sufficient protection for mask patterns during the process.
Innovation Solution
A pattern forming material containing a specific polymer with a first monomer unit, represented by a general formula, is used to form a composite film by infiltering a metal compound into a patterned organic film, which enhances the etch resistance of the mask pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional organic film is used as a mask pattern, then the manufacturing process is simple, but the etch resistance is insufficient for prolonged exposure to etching gases
Solution Approach 1:
The patent creates a composite film by infiltering a metal compound into an organic film, combining the etch resistance of metal compounds with the film-forming properties of organic materials. This composite structure provides sufficient etch resistance for prolonged exposure while maintaining a relatively simple single-layer mask structure, avoiding the need for complex multilayer configurations.
Solution Approach 2:
The patent modifies the properties of the organic film by infiltering metal compounds into it, changing the chemical composition and etch resistance parameters. This transformation allows the organic film to withstand prolonged etching gas exposure without requiring additional protective layers or complex structures.
2Reliability
If carbon layers are added to multilayer mask structures to improve etch resistance, then the etch resistance increases, but the manufacturing cost and process complexity increase
Solution Approach 1:
The patent extracts the essential function of carbon layers (etch resistance) and achieves it through a different approach - infiltering metal compounds into an organic film. This eliminates the need for separate carbon layer deposition processes and associated costs while maintaining the required etch resistance for prolonged exposure to etching gases.
Solution Approach 2:
The patent uses an organic film as a base material that is relatively inexpensive and easy to apply, then enhances it with metal compound infiltering. This approach replaces expensive carbon layer additions while achieving the same protective function, reducing overall manufacturing costs.
3Manufacturing precision
If the mask pattern is exposed to etching gas for a long time to achieve high aspect ratio patterns, then the pattern quality improves, but the etch resistance requirement increases
Solution Approach 1:
The patent prepares the organic film with infiltered metal compounds before the etching process, creating a pre-enhanced structure with superior etch resistance. This preliminary action ensures the mask pattern can withstand prolonged etching gas exposure required for high aspect ratio patterns without degrading or losing definition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material achieves high etch resistance, particularly in reactive ion etching, allowing for the creation of mask patterns with high aspect ratios and reducing the need for costly carbon layers in multilayer mask structures.
Implementation Method 1
forming a composite film by infiltering a metal compound into the patterned organic film
Data Source
AI summary
According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.