Pattern Forming Method for Diverse Mask Widths

Solution Overview

Problem

Existing pattern forming methods using sidewall transferring processes are limited in creating mask patterns with various widths, requiring additional resist processing steps that increase costs and reduce yield.

Innovation Solution

A pattern forming method involving a resist film with multiple regions, irradiated with different light or energy ray amounts, followed by selective dissolution and coating, allows for the formation of mask patterns with various widths without the need for subsequent resist processing, using chemically amplified positive resist and non-chemically amplified main chain decomposed positive resist materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If additional resist processing steps are used to create mask patterns with various widths, then the versatility of pattern width creation is improved, but the manufacturing complexity and cost increase

Engineering Contradiction:

Improvepattern width varietyVSAvoidprocessing steps

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The resist film is divided into multiple regions with different irradiation amounts, creating distinct solubility characteristics in different areas. This segmentation allows the same resist film to serve multiple functions (creating patterns of various widths) without requiring separate processing steps for each pattern type.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the resist film are given different local properties through selective irradiation. The first region receives a first irradiation amount making it soluble in a first liquid, while the second region receives a second irradiation amount making it soluble in a second liquid. This local quality differentiation enables versatile pattern creation from a single resist film structure.

Inventive Principle:

Principle #3Local quality

2Adaptability or versatility

If additional resist processing steps are used to create mask patterns with various widths, then the versatility of pattern width creation is improved, but the manufacturing cost increases

Engineering Contradiction:

Improvepattern width varietyVSAvoidmanufacturing cost

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The resist film is divided into multiple regions with different irradiation amounts, creating distinct solubility characteristics in different areas. This segmentation allows the same resist film to serve multiple functions (creating patterns of various widths) without requiring separate processing steps for each pattern type.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A single resist film structure performs multiple functions by creating mask patterns of various widths through selective dissolution in different liquids. The multi-functional design eliminates the need for separate resist processing steps for different pattern widths, thereby reducing manufacturing cost.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Adaptability or versatility

If additional resist processing steps are used to create mask patterns with various widths, then the versatility of pattern width creation is improved, but the manufacturing yield decreases

Engineering Contradiction:

Improvepattern width varietyVSAvoidmanufacturing yield

Core Design Contradiction:

Adaptability or versatilityVSProductivity

Solution Approach 1:

The resist film is divided into multiple regions with different irradiation amounts, creating distinct solubility characteristics in different areas. This segmentation allows the same resist film to serve multiple functions (creating patterns of various widths) without requiring separate processing steps for each pattern type.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The resist film is pre-irradiated with different amounts of light or energy rays in different regions before the dissolution process. This preliminary action creates the solubility differences that will later enable selective removal of resist in specific regions, allowing versatile pattern width creation in a single processing flow.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the formation of mask patterns with diverse widths through the sidewall transferring process, reducing the number of processing steps, thereby lowering costs and improving yield by eliminating the need for additional resist processing.

Implementation Method 1

irradiating the first region with light or an energy ray in a first irradiation amount, and irradiating the second region with light or an energy ray in a second irradiation amount

Methodology Applied

Scientific EffectPhotochemical reaction: Photopolymerisation

Implementation Method 2

forming a coating film on a side surface of the resist film

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 3

forming a coating film on a side surface of the resist film

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS11809082B2Pattern forming method and template manufacturing method

Publication Date: 2023.11.07 KIOXIA CORP

AI summary

A pattern forming method includes forming a resist film having a first region, a second region, and a third region, on a substrate, irradiating the first region with light or an energy ray in a first irradiation amount, and irradiating the second region with light or an energy ray in a second irradiation amount, the second irradiation amount being smaller than the first irradiation amount. The pattern forming method also includes dissolving the resist film of the first region by using first liquid, forming a coating film on a side surface of the resist film after the resist film of the first region is dissolved, and dissolving the third region by using second liquid that is different from the first liquid.