Pattern forming method using neutral film irradiation
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Solution Overview
Problem
Conventional directed self-assembly (DSA) lithographic techniques for semiconductor devices require a long process and struggle to form desired patterns effectively.
Innovation Solution
A pattern forming method involving the formation of a neutral film with affinity for specific polymers, irradiation to create pinning parts, and subsequent microphase separation of block copolymer films to achieve precise pattern formation through energy beam treatment and selective removal of polymer portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional directed self-assembly (DSA) lithographic techniques are used, then pattern formation is achieved, but the process requires many steps and takes a long time
Solution Approach 1:
The patent applies preliminary action by pre-forming a guide pattern layer with specific chemical properties (hydrophobic/hydrophilic regions) before introducing the block copolymer. This pre-prepared template directs the self-assembly process, eliminating the need for multiple iterative lithography steps and significantly reducing the overall process time while maintaining pattern precision.
Solution Approach 2:
The block copolymer system performs self-service through spontaneous microphase separation driven by thermodynamic forces. The immiscible polymer blocks automatically segregate into ordered domains guided by the underlying pattern, forming the desired nanoscale structures without requiring external intervention or complex processing equipment, thus simplifying the manufacturing process.
2Manufacturing precision
If conventional DSA methods are used, then some pattern formation is achieved, but it is difficult to form the desired pattern precisely
Solution Approach 1:
The guide pattern layer acts as an intermediary between the substrate and the block copolymer system. This intermediate layer with spatially varying surface energy properties directs the orientation and positioning of block copolymer domains, enabling precise pattern formation. The intermediary translates macroscopic design requirements into nanoscale self-assembly instructions without requiring direct complex control.
Solution Approach 2:
The patent implements local quality by creating regions with different surface properties (hydrophobic vs. hydrophilic) in the guide pattern layer. These localized chemical differences provide specific binding preferences for different block copolymer components, enabling precise spatial control over pattern formation. Each region's unique properties guide the self-assembly process locally, achieving high overall pattern accuracy through distributed local control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the rapid formation of fine patterns with fewer processes, enabling efficient transfer of patterns to underlying layers and the potential for forming various pattern types, such as line-and-space or hole patterns, in semiconductor devices.
Implementation Method 1
forming a first pinning part having an affinity for the first polymer by irradiating a first region of the neutral film with an energy beam
Implementation Method 2
forming, on the first pinning part, a pattern including first and second portions formed of the first polymer and a third portion provided between the first and second portions and formed of the second polymer, by performing a predetermined treatment for the block copolymer film to perform a microphase separation
Data Source
AI summary
According to one embodiment, a pattern forming method includes forming, on an underlying region, a neutral film having an affinity for first and second polymers, forming a first pinning part having an affinity for the first polymer by irradiating a first region of the neutral film with an energy beam, forming, on the neutral film including the first pinning part, a block copolymer film containing the first and second polymers, and performing a predetermined treatment for the block copolymer film to perform a microphase separation.