Pattern Generator Grid Segmentation for Lithography Precision
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current lithography methods, such as e-beam lithography, face challenges in scaling down pixel size due to limitations in shrinking pixel control circuits and increased data volume, leading to truncation errors and higher manufacturing costs.
Innovation Solution
A method involving a pattern generator with multiple segments configured to offset and delayed data signal outputs, allowing for reduced data grid pixel size without reducing the pixel size of the pattern generator, thereby increasing data volume efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the pixel size in the exposure grid is increased to reduce truncation error, then manufacturing cost and time increase, but manufacturing precision deteriorates
Solution Approach 1:
The exposure grid is divided into multiple segments, each segment being exposed separately with optimized pixel sizes. This allows different regions to use different grid resolutions, reducing overall data volume while maintaining precision where needed.
Solution Approach 2:
The patent implements dynamic grid refinement where the pixel size is adaptively adjusted based on local feature complexity. Simple regions use coarser grids while complex regions use finer grids, optimizing the balance between precision and data volume.
2Manufacturing precision
If the pixel size is reduced to achieve smaller critical dimensions, then truncation error increases, but device density improves
Solution Approach 1:
Different regions of the exposure grid are assigned different pixel sizes based on local feature requirements. Areas with simple patterns use larger pixels to reduce truncation error, while areas with complex features use smaller pixels to maintain resolution.
Solution Approach 2:
The patent dynamically changes the pixel size parameter across different regions and during different stages of the exposure process, allowing optimization of both precision and data volume by adapting the grid resolution to local requirements.
3Manufacturing precision
If the number of pixels in the exposure grid is increased to minimize truncation error, then data volume increases, but manufacturing cost increases
Solution Approach 1:
The exposure grid is segmented into multiple regions with different resolutions. By dividing the grid into segments, the total number of pixels is reduced while maintaining sufficient precision in critical areas, thereby reducing data volume and manufacturing cost.
Solution Approach 2:
Instead of uniformly increasing pixel density across the entire grid, the patent applies finer resolution only where necessary for specific features, using coarser resolution elsewhere. This partial application of high resolution reduces overall data volume while maintaining precision where needed.
Data Source
AI summary
The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n<1. The method includes providing a pattern generator having a first pixel size S1 to generate an alternating data grid having a second pixel size S2 that is <S1, wherein the pattern generator includes multiple grid segments configured to offset from each other in a first direction; and scanning the pattern generator in a second direction perpendicular to the first direction during the lithography process such that each subsequent segment of the grid segments is controlled to have a time delay relative to a preceding segment of the grid segments.