Pattern Measurement Device for Deep Hole Bottom Deviation Correction
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Solution Overview
Problem
The measurement accuracy of deep holes and grooves with high aspect ratios in semiconductor devices is compromised due to positional deviations between the upper and bottom parts, leading to reduced detection efficiency and accuracy, as existing methods fail to effectively correct for these deviations.
Innovation Solution
A pattern measurement device and method using a charged particle beam device that calculates and corrects dimension values based on the deviation between pattern parts, employing multiple electron detection means and image processing to achieve accurate measurements of groove and hole bottoms, regardless of formation accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If the aspect ratio of deep holes and deep grooves becomes large, then the depth measurement capability is improved, but the detection efficiency of electrons emitted from the bottom parts deteriorates
Solution Approach 1:
The patent introduces a new dimension of correction by measuring positional deviation between upper and bottom parts of patterns and using this information to correct dimension measurements. This transforms a 2D measurement problem into a 3D correction process, allowing accurate measurement of deep structures despite electron detection difficulties
Solution Approach 2:
The system measures the actual positional deviation of pattern bottom parts from their ideal positions and uses this feedback information to correct dimension measurements. This closed-loop approach compensates for the deterioration in detection efficiency caused by high aspect ratios
2Length of stationary object
If the aspect ratio of deep holes and deep grooves becomes large, then the depth measurement capability is improved, but the accuracy of dimension measurement deteriorates due to positional deviation
Solution Approach 1:
The patent adds a correction dimension to the measurement process by evaluating positional deviation of pattern bottom parts and applying this information to correct dimension measurements, thereby maintaining manufacturing precision even for high aspect ratio structures
Solution Approach 2:
The system uses an intermediary correction process that measures positional deviation as an intermediate parameter and uses this to bridge the gap between raw measurements and accurate dimension values, compensating for the deteriorating measurement accuracy
3Measurement precision
If stereo observation with multiple images at different angles is used, then cross-sectional shape measurement capability is improved, but the accuracy of sample and beam setting has significant influence on measurement accuracy
Solution Approach 1:
The patent extracts and separately measures the positional deviation parameter from the pattern bottom parts, isolating this critical factor from the complex stereo observation process. This extracted information is then used to correct dimension measurements without requiring complex beam and sample repositioning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-accuracy measurement of deep groove and hole bottoms, improving the yield rate of semiconductor devices by correcting for positional deviations and enhancing measurement precision.
Implementation Method 1
a signal obtained by a charged particle beam device... scanning of a charged particle beam on the sample
Data Source
AI summary
The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.