Pattern Forming Polymer for Metal-Infiltrated Etch-Resistant Masks
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Solution Overview
Problem
In semiconductor manufacturing, there is a demand for techniques that can form high-aspect-ratio patterns with high etch resistance, as mask patterns are exposed to etching gases for extended periods, and existing methods lack effective solutions for achieving sufficient etch resistance.
Innovation Solution
A polymerizable compound is developed, which forms a polymer used in a pattern forming material. This material, when processed into a mask pattern by forming an organic film and infiltrating a metallic compound, provides high etch resistance through strong bonding of the metallic compound to the organic film, enabling the use of the composite film as a mask pattern in semiconductor device manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a mask pattern is exposed to etching gas for a long time to form high aspect ratio patterns, then the etching depth increases, but the etch resistance of the mask pattern deteriorates
Solution Approach 1:
The patent uses a composite mask pattern consisting of an organic film layer and a metallic compound layer. The organic film provides structural integrity while the metallic compound layer (such as aluminum, tungsten, or titanium) provides superior etch resistance. This composite structure allows the mask to withstand prolonged exposure to etching gas, enabling high aspect ratio pattern formation without compromising mask durability
Solution Approach 2:
The patent changes the chemical composition parameters of the mask pattern by incorporating specific metallic compounds with high bond energies to etching gases. By selecting metals with appropriate atomic weights and chemical properties, the mask pattern achieves enhanced etch resistance while maintaining the ability to form deep patterns. The metallic compound layer acts as a protective barrier that slows down etching gas penetration
2Reliability
If carbon deposition method is used to create mask patterns with high etch resistance, then etch resistance improves, but manufacturing cost increases
Solution Approach 1:
The patent employs an organic film material that can be deposited using conventional spin-coating or spray methods, replacing the expensive carbon deposition process. The organic film serves as a sacrificial or protective layer that provides adequate etch resistance for the application, significantly reducing manufacturing costs while maintaining functional performance. This approach trades the extreme durability of carbon deposition for a more cost-effective solution that meets the specific requirements of high aspect ratio pattern formation
Solution Approach 2:
The patent changes the material deposition method from physical vapor deposition (carbon) to chemical solution processing (organic film). By adjusting the molecular structure and chemical composition of the organic polymer, the material achieves optimal etch resistance properties without requiring expensive equipment or processes. The organic film's chemical composition can be tailored to provide specific etching rates and resistance characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high etch resistance and allows for the formation of patterns with high aspect ratios, effectively addressing the limitations of existing techniques by ensuring the metallic compound is firmly bonded to the organic film, enhancing the durability and performance of the mask pattern in semiconductor processing.
Implementation Method 1
allows for a mask pattern with high etch resistance by infiltrating a metallic compound into the film
Data Source
AI summary
A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below,where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where a carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.