Pattern Forming Polymer for High-Etch-Resistance Semiconductor Masks
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Solution Overview
Problem
There is a growing demand for technologies that can form high aspect ratio patterns in semiconductor device manufacturing, requiring a mask pattern with high etch resistance due to prolonged exposure to etch gas.
Innovation Solution
A polymerizable compound represented by specific general formulas is used to produce a polymer that forms a pattern forming material. This material is then used to create a mask pattern with high etch resistance by forming a metal-containing organic film, patterning it, and infiltrating it with a metallic compound to form a composite film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a mask pattern is used for high aspect ratio pattern formation, then the etching process can achieve the required depth, but the mask pattern requires high etch resistance which increases material requirements and process complexity
Solution Approach 1:
The patent uses a composite film structure consisting of a low dielectric constant material layer and an organic film layer. The low dielectric constant material provides the necessary etch resistance for high aspect ratio patterns, while the organic film enables precise pattern formation. This composite structure resolves the contradiction by combining materials with complementary properties to achieve both high etch resistance and precise patterning capability.
Solution Approach 2:
The patent modifies the dielectric constant parameter of the film material by using a low dielectric constant material (k < 3.0) for the base layer. This parameter change allows the mask pattern to maintain high etch resistance during deep etching processes while enabling better plasma penetration and more uniform etching throughout the high aspect ratio structure.
2Manufacturing precision
If a low dielectric constant material is used for the film, then plasma penetration is improved and etching uniformity is enhanced, but the film formation process becomes more complex
Solution Approach 1:
The patent divides the film structure into two distinct segments: a low dielectric constant material layer and an organic film layer. Each layer performs a specific function - the low-k material provides plasma penetration and etching uniformity, while the organic layer provides pattern definition. This segmentation allows each layer to be optimized independently, resolving the contradiction between achieving uniform etching and maintaining process simplicity.
Solution Approach 2:
The organic film acts as an intermediary layer between the low dielectric constant material and the etch gas. It mediates the interaction by providing a controlled interface that enhances plasma penetration into the underlying structure while maintaining pattern fidelity. This intermediary approach improves etching uniformity without requiring complex modifications to the low-k material deposition process.
3Reliability
If carbon deposition layer is used traditionally, then etch resistance is achieved, but the cost increases significantly
Solution Approach 1:
The patent replaces expensive carbon deposition layers with a low dielectric constant material that can be deposited using standard semiconductor fabrication processes. The low-k material serves as a cost-effective alternative that provides sufficient etch resistance for the application, significantly reducing material costs while maintaining the necessary performance characteristics.
Solution Approach 2:
The patent changes the material parameter from carbon-based deposition to low dielectric constant materials with k < 3.0. This parameter change enables the use of more economical materials that can be deposited using conventional semiconductor manufacturing techniques, thereby reducing the quantity of expensive substances required while maintaining etch resistance performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting mask pattern exhibits high etch resistance, enabling the formation of high aspect ratio patterns in semiconductor devices, and can potentially replace costly carbon deposition layers used in traditional methods.
Implementation Method 1
a polymerizable compound capable of producing a polymer which is useful as a pattern forming material and the polymer which is obtained by using the compound
Data Source
AI summary
A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3),where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.