Pattern Resizing for Electron Beam Lithography Loading Effect Correction
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Solution Overview
Problem
Conventional methods for resizing patterns in electron beam writing suffer from over-correction issues due to the use of uniform resizing amounts, leading to imprecise line width uniformity as patterns miniaturize, especially when correcting for the loading effect in semiconductor manufacturing.
Innovation Solution
A method that calculates and applies specific dimension correction amounts for each small region of the pattern, based on area density and line width, to accurately resize the pattern dimensions, thereby preventing over-correction and enhancing precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If uniform resizing amount is applied to correct loading effect, then correction process is simplified, but manufacturing precision deteriorates due to over-correction
Solution Approach 1:
The patent divides the writing region into multiple small regions (meshes) and calculates dimension correction amounts separately for each small region based on its area density. This segmentation allows the correction to account for local variations in pattern density, preventing over-correction in low-density areas while adequately correcting high-density areas, thus maintaining line width uniformity without sacrificing process simplicity.
Solution Approach 2:
The patent applies different dimension correction amounts to different regions based on their specific characteristics (area density and line width). By making the correction amount location-dependent rather than uniform, the system achieves precise compensation for loading effects in each local area, thereby improving overall manufacturing precision while maintaining reasonable process complexity.
2Productivity
If uniform resizing amount is used for all patterns, then processing time is reduced, but manufacturing precision deteriorates as patterns miniaturize
Solution Approach 1:
The writing region is segmented into multiple small regions with predetermined sizes, and dimension correction amounts are calculated for each segment based on its area density. This approach enables efficient processing by limiting detailed correction calculations to manageable segments rather than treating the entire region uniformly, thereby maintaining both productivity and precision for miniaturized patterns.
Solution Approach 2:
The patent changes the correction parameter from a uniform value to a variable value that depends on local area density and line width characteristics. By introducing these parameter variations, the system achieves accurate dimension control for miniaturized patterns without significantly increasing overall processing time, as the calculation is performed systematically across segmented regions.
3Manufacturing precision
If dimension correction is calculated for each small region based on area density, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
By segmenting the writing region into predetermined small regions (meshes), the patent simplifies the complexity of calculating dimension correction for the entire region. Each small region can be processed independently with its own correction amount based on local area density, making the overall complex task manageable through systematic division and reducing computational burden.
Solution Approach 2:
The patent introduces area density as a key parameter for calculating dimension correction amounts. By using this physically meaningful parameter that directly relates to loading effect magnitude, the correction calculation becomes more accurate without requiring overly complex models. The relationship between area density and correction amount provides a straightforward computational approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for highly precise resizing of patterns, ensuring accurate line width uniformity by tailoring correction amounts to the specific characteristics of each region, thereby improving the precision of pattern writing in semiconductor manufacturing.
Implementation Method 1
the electron beam 330 that left a charged particle source 430 and has passed through the opening 411 is deflected by a deflector. Then, the electron beam 330 passes through a part of the variable-shaped opening 421 of the second aperture plate 420, and irradiates a target workpiece 340
Implementation Method 2
The proximity effect is generated by the backward scattering of electron beams penetrating a resist film, reaching a layer thereunder to be reflected, and being incident into the resist film again
Data Source
AI summary
A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.