Pattern Shape Determination for Semiconductor OPC Verification

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Solution Overview

Problem

In semiconductor manufacturing, the scaling of integrated circuit patterns poses challenges in maintaining dimensional accuracy during lithography and etching processes, leading to inefficiencies in pattern formation, particularly due to the time-consuming nature of OPC verification processes which require simulating identical patterns for verification.

Innovation Solution

A pattern shape determining method that sets reference positions on patterns to assess dimensional differences within allowable tolerances, allowing for efficient and accurate identification of identical patterns by considering distance from a point of interest, thereby streamlining the verification process and reducing the need for full-scale OPC verification.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If full-scale OPC verification is performed on the whole integrated circuit pattern, then verification accuracy is improved, but verification time increases significantly

Engineering Contradiction:
Improveverification accuracyVSAvoidverification time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent divides the integrated circuit pattern into multiple identical pattern units and selects only one representative unit for verification. By segmenting the verification scope from the entire pattern to a single representative pattern, the verification time is significantly reduced while maintaining verification accuracy, as the representative pattern captures the essential verification requirements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent uses a representative pattern that is identical to multiple other patterns in the integrated circuit pattern. By verifying only this representative pattern, the verification results can be applied to all identical patterns through copying the verification outcome, thereby reducing verification time without sacrificing accuracy.

Inventive Principle:
Principle #26Copying

2Reliability

If identical patterns are extracted and full simulation is performed on each, then verification completeness is improved, but processing efficiency deteriorates

Engineering Contradiction:
Improveverification completenessVSAvoidprocessing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent merges the verification of multiple identical patterns into a single verification process. By recognizing that multiple patterns are identical and performing verification only on one representative pattern, the processing efficiency is improved while verification completeness is maintained through the representative pattern's ability to represent all identical patterns.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The representative pattern serves multiple functions: it represents itself, and it also represents all other identical patterns in the integrated circuit pattern. This multi-functionality allows a single verification process to cover multiple patterns, improving processing efficiency while maintaining verification completeness.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS8885949B2Pattern shape determining method, pattern shape verifying method, and pattern correcting method
Publication Date: 2014.11.11 KIOXIA CORP
  • US8885949B2 patent drawing
  • US8885949B2 patent drawing
  • US8885949B2 patent drawing

AI summary

According to the pattern shape determining method of the embodiment, a first reference position of a pattern shape is set on a first pattern and a second reference position of a pattern shape is set on a second pattern. Moreover, an allowable dimensional difference between the first pattern and the second pattern is set to a value corresponding to a distance from the first reference position. Then, it is determined whether the second pattern has a pattern shape identical with the first pattern, based on whether a dimensional difference between the first pattern and the second pattern is within a range of an allowable dimensional difference set at a position at which the dimensional difference is calculated.