Pattern Tone Reversal for High-Throughput HDD Manufacturing

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Solution Overview

Problem

Current hard disk drive (HDD) patterning techniques require breaking vacuum and are not compatible with high-throughput production, especially for bit pattern media (BPM) disk manufacturing, and face challenges in etch selectivity between mask material and underlying layers.

Innovation Solution

The method involves initial resist patterning, collimated deposition of a mask material, and an etch back using reactive ion etching (RIE), which allows for pattern tone reversal without thick material deposition or planarization, and offers etch selectivity through the microloading effect, enabling patterning on both sides of a disk without breaking vacuum.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If traditional vacuum-based patterning techniques are used, then manufacturing precision is maintained, but productivity decreases due to vacuum breaking requirements

Engineering Contradiction:
ImprovethroughputVSAvoidetch selectivity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the fundamental parameter of the patterning process by using reactive ion etching (RIE) instead of traditional vacuum-based techniques. This parameter change enables high-throughput production while maintaining etch selectivity through controlled plasma chemistry and power density adjustments

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces mechanical vacuum-based patterning systems with a chemical plasma-based RIE system. This substitution eliminates the need for vacuum breaking while achieving comparable or superior patterning precision through chemical selectivity rather than mechanical control

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If thick mask material is deposited, then etch selectivity is improved, but device complexity and material usage increase

Engineering Contradiction:
Improveetch selectivityVSAvoidmaterial usage
Core Design Contradiction:
Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The patent optimizes the mask layer thickness parameter to a specific range (5-50 nm) that provides sufficient etch selectivity without excessive material usage. The reactive ion etching process parameters are simultaneously adjusted to maintain high selectivity at this reduced thickness

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a sacrificial mask layer that is selectively removed after transferring the pattern. The mask material is deposited precisely where needed and then discarded after serving its patterning function, optimizing the balance between selectivity and material consumption

Inventive Principle:
Principle #34Discarding and recovering

3Manufacturing precision

If planarization is performed, then manufacturing precision is improved, but productivity decreases

Engineering Contradiction:
Improvesurface flatnessVSAvoidproduction throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent performs preliminary patterning of the mask layer before the etching process, establishing the complete pattern structure in advance. This preliminary action eliminates the need for subsequent planarization steps while maintaining surface flatness through controlled deposition and etching sequences

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables high-throughput production of HDDs with efficient patterning on both sides of disks, maintaining etch selectivity and compatibility with BPM disk manufacturing, enhancing operational efficiency and reducing manufacturing complexity.

Implementation Method 1

an etch back using reactive ion etching (RIE), which allows for pattern tone reversal without thick material deposition or planarization

Methodology Applied
Scientific EffectReactive ion etching: Plasma

Data Source

PatentUS9105295B2Pattern tone reversal
Publication Date: 2015.08.11 WESTERN DIGITAL TECHNOLOGIES INC
  • US9105295B2 patent drawing
  • US9105295B2 patent drawing
  • US9105295B2 patent drawing

AI summary

A method for patterning a substrate is disclosed. Depressions are patterned into a resist layer over a substrate. A mask layer is deposited over the resist layer at least partially filling the depressions. The mask layer is etched to expose a top surface of the resist layer and leaving at least a portion of the mask layer in the depressions of the resist layer, wherein the mask layer over said top surface of the resist layer is etched at a faster rate than said mask layer in the depressions of the resist layer. Exposed portions of the resist layer are removed to expose portions of the substrate. Exposed portions of the substrate are etched.