Pattern Transfer Method for Open-Ended Semiconductor Structures
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Solution Overview
Problem
Conventional semiconductor manufacturing processes require an additional step to cut closed ends of patterns, which complicates the formation of patterns with open ends and can affect the electrical properties of semiconductor devices.
Innovation Solution
A method of pattern transfer where a pre-cut first pattern is formed above a target layer, allowing it to stop the transfer of closed ends of a second pattern, such as spacer loops, thereby eliminating the need for post-transfer cutting and ensuring open-ended patterns without closed ends.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional pattern transfer process is used to form closed-end patterns, then the pattern transfer is complete, but an additional cutting step is required to remove closed ends
Solution Approach 1:
A first pattern is formed above the target layer before forming the second pattern. This first pattern serves as a pre-cut structure that stops the transfer of closed ends during the subsequent pattern transfer process, eliminating the need for post-transfer cutting operations
Solution Approach 2:
The pattern formation process is divided into two distinct patterns: a first pattern that defines the cutting boundaries and a second pattern that contains the actual circuit features. This segmentation allows the first pattern to control where closed ends are stopped during transfer
2Manufacturing precision
If an additional cutting step is added to remove closed ends, then open-end patterns are achieved, but the manufacturing process becomes more complex
Solution Approach 1:
The first pattern acts as a self-service structure that automatically stops the transfer of closed ends at the desired locations. The pattern transfer process itself performs the cutting function through the presence of the first pattern, eliminating the need for separate cutting operations
3Productivity
If closed ends are not removed, then the pattern transfer process is simpler, but electrical properties of semiconductor devices are affected
Solution Approach 1:
The first pattern is formed in advance to prevent the transfer of closed ends to the target layer. By establishing this blocking structure beforehand, the harmful effect of closed ends on electrical properties is prevented from occurring in the first place
Data Source
AI summary
A method of pattern transfer is provided, comprising: providing a target layer; forming a first pattern above the target layer; forming a second pattern (such as spacer loops) above the target layer and above the first pattern, wherein one closed end of the second pattern partially overlaps with the first pattern; and transferring the second pattern to the target layer, wherein the first pattern stops transferring pattern of the closed end of the second pattern to the target layer.