Patternable Low-k Dielectric Film Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing processes for forming interconnect structures, particularly those using low-k dielectrics, are complex, costly, and inefficient due to the need for multiple sacrificial layers and plasma etching, which can damage low-k materials and reduce manufacturing yields.
Innovation Solution
A method that combines the functions of a photoresist and a dielectric material into a single patternable low-k dielectric, using an inorganic antireflective coating deposited by vapor phase techniques, eliminating the need for separate photoresists and plasma etching, and allowing the low-k material to be converted into a dielectric during a post-patterning cure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple sacrificial hardmask layers are added to protect low-k dielectric materials, then the low-k materials are protected from damage during processing, but the process complexity increases enormously with more film deposition, pattern transfer etch, and hardmask removal steps
Solution Approach 1:
The patent combines the protective function and the pattern definition function into a single layer by making the low-k dielectric material itself patternable through photo lithography. This eliminates the need for separate sacrificial hardmask layers, reducing process complexity while maintaining protection of the low-k material during processing.
Solution Approach 2:
The low-k dielectric material is designed to serve multiple functions: it provides electrical insulation, structural support, and pattern definition capability. By incorporating photo lithographic sensitivity directly into the low-k material, it becomes a multi-functional layer that replaces multiple separate layers in traditional processes.
2Ease of manufacture
If conventional organic antireflective coatings are used for lithography of patternable low-k material, then the lithography process can proceed, but the organic coating cannot withstand high temperature curing processes and degrades
Solution Approach 1:
The patent changes the material parameter of the antireflective coating from organic to inorganic composition. This parameter change enables the coating to withstand high temperature curing processes while maintaining its antireflective properties and preventing lithography defects, thus resolving the thermal stability issue.
3Device complexity
If patternable low-k dielectric material is used without inorganic antireflective coating, then the process is simpler, but lithography defects occur due to light reflection from the substrate
Solution Approach 1:
The inorganic antireflective coating acts as an intermediary layer between the patternable low-k dielectric material and the lithography light source. This intermediate layer prevents harmful light reflection from the substrate while being compatible with the subsequent high temperature curing process, thus maintaining pattern integrity without adding excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication of interconnect structures, reduces the number of layers and processing steps, lowers costs, and enhances manufacturing efficiency while maintaining pattern integrity and dielectric properties.
Implementation Method 1
an inorganic antireflective coating deposited from a vapor phase
Data Source
AI summary
A method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating. The inorganic antireflective coating is vapor deposited and contains atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. At least one interconnect pattern is then formed within the at least one patternable low-k material. Next, the at least one patternable low-k material containing the at least one interconnect pattern is cured.