Patternable Polymer Block Brush Layers for Direct Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current block copolymer lithography methods require multi-step patterning techniques and photoresist application, which are inefficient for creating functional nanostructures and templates, as they lack direct patterning capabilities and often result in disordered assembly of block copolymer domains.
Innovation Solution
Development of novel polymer brushes, specifically Type I, Type II, and Type III block copolymer brushes, which are directly patternable by e-beam, deep UV, or X-ray lithography, allowing for the creation of preferential and non-preferential layers that induce perpendicular orientation of block copolymer domains with respect to the substrate, thereby facilitating ordered assembly without the need for resists.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional multi-step patterning techniques and photoresist application are used, then block copolymer lithography can be performed, but the process complexity increases and manufacturing efficiency decreases
Solution Approach 1:
The patent extracts and eliminates the need for separate photoresist application steps by incorporating lithographically sensitive polymer blocks directly into the buffer layer structure. The buffer layer itself becomes the patternable element, removing the intermediary resist layer and simplifying the overall manufacturing process.
Solution Approach 2:
The patent merges the buffer layer function with the patterning function by incorporating lithographically sensitive polymer blocks (such as PMMA) directly into the buffer layer composition. This combination allows the same layer to serve both as a buffer for block copolymer assembly and as the patternable resist layer, eliminating separate process steps.
2Manufacturing precision
If traditional photoresist application is used, then patterning can be achieved, but the assembly order of block copolymer domains becomes disordered
Solution Approach 1:
The patent applies preliminary action by pre-patterning the buffer layer before block copolymer deposition. The lithographically sensitive polymer blocks in the buffer layer are patterned first, creating preferential and non-preferential regions that will subsequently guide the ordered assembly of block copolymer domains in a single step, eliminating the need for separate resist removal and pattern transfer steps.
3Productivity
If conventional patterning methods are used, then patterns can be formed, but the number of process steps increases
Solution Approach 1:
The patent implements continuity of useful action by integrating the patterning function into the buffer layer deposition process itself. The lithographically sensitive polymer blocks are incorporated during buffer layer formation, allowing pattern definition to occur continuously without interruption for separate resist application, development, and etching steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel polymer brushes enable direct patterning and ordered assembly of block copolymer domains, reducing the complexity of traditional patterning methods and enhancing the control over domain orientation, leading to improved nanostructure formation for applications like bit patterned media and photovoltaic cells.
Implementation Method 1
Lithographically-sensitive A block, such as poly(methyl methacrylate) (PMMA), poly(2-methacrylamide) (PHEMA), poly(isobutyl methacrylate) (PIBMA), poly(neopentyl methacrylate) (PNPMA), or poly(2,2,2-trifluoroethyl methacrylate) (PTFEMA), that is sensitive to one or more of e-beam, deep UV, extreme UV (EUV), or X-ray patterning such that exposure to the radiation results in modification and/or removal of the polymer
Data Source
AI summary
Provided are novel polymer brushes that may be used in underlying buffer or imaging layers for block copolymer lithography. The novel polymer brushes include X-A-b-B and X-A-b-C block copolymer brushes, with X an anchoring group, the A block a lithographically sensitive polymer, and the C block a random copolymer. According to various embodiments, polymer block brushes for neutral and preferential layers are provided; the neutral layers non-preferential to the overlying block copolymer and the preferential layers preferential to a block of the overlying block copolymer. Also provided are novel methods of patterning polymer block brush layers as well as polymer block brush buffer and imaging layers that are directly patternable by e-beam, deep UV, extreme UV, X-ray or other lithographic methods.