Patterned Base Member Etching with Electron-Beam Resist Stabilization
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Solution Overview
Problem
The existing methods for manufacturing patterned base members using positive resist in nano-scale micromachining face challenges in maintaining pattern accuracy due to shape changes during etching, which can result in unintended patterns on workpieces, especially as pattern fineness increases.
Innovation Solution
A method involving forming a resist layer with a positive resist, exposing it to an electron beam to create patterned regions, developing to isolate unexposed areas, and subsequent electron beam irradiation to stabilize the pattern before etching, using the patterned resist as a mask for precise base member processing, and transferring this pattern to a workpiece for accurate etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a positive resist is used for patterning in nano-scale micromachining, then the initial pattern formation is achieved, but the pattern shape changes during etching leading to reduced manufacturing precision
Solution Approach 1:
The patent applies preliminary action by performing electron beam irradiation on the entire resist layer before the etching process. This pre-irradiation stabilizes the resist material's properties in advance, preventing shape changes during subsequent etching operations and maintaining pattern accuracy throughout the manufacturing process.
Solution Approach 2:
The patent utilizes parameter changes by altering the physical state of the resist material through electron beam irradiation. The irradiation modifies the resist's crosslinking density and mechanical properties, transforming it from a state prone to deformation to a stable state that maintains its pattern shape during etching, thereby resolving the contradiction between initial patterning capability and shape stability.
2Measurement precision
If the pattern fineness is increased, then the resolution is improved, but the influence of shape change becomes larger reducing reliability
Solution Approach 1:
For fine patterns, the patent applies preliminary electron beam irradiation to the entire resist layer before etching. This pre-treatment stabilizes the resist structure at the nanoscale, preventing the magnified shape changes that would otherwise occur during etching of fine features, thereby maintaining both high resolution and reliable pattern formation.
Solution Approach 2:
The patent changes the physical parameters of the resist material through electron beam irradiation, modifying its mechanical and chemical properties to enhance stability. This parameter transformation ensures that even the most精细 patterns maintain their intended geometry during etching, resolving the reliability issue associated with high-resolution patterning.
3Manufacturing precision
If electron beam irradiation is applied to the entire patterned resist layer, then the shape change during etching is reduced, but the processing time increases
Solution Approach 1:
The patent changes the irradiation parameters by using lower electron beam intensity compared to conventional high-intensity methods. This lower intensity irradiation is sufficient to stabilize the resist material's properties without requiring excessive energy input or prolonged exposure times, thus maintaining pattern accuracy while minimizing the time penalty.
Solution Approach 2:
The patent uses the existing patterned resist structure as a template and applies a light, uniform electron beam irradiation across the entire area. This approach is more efficient than iterative adjustments or localized corrections, as it stabilizes the entire pattern in a single pass, reducing overall processing time while maintaining accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the accuracy of the patterned base member and workpiece processing by reducing shape changes during etching, ensuring consistent and precise pattern formation even at finer scales.
Implementation Method 1
exposing a portion of the resist layer to an electron beam to form an exposed portion and an unexposed portion in the resist layer
Implementation Method 2
irradiating an entirety of the patterned resist layer with an electron beam
Data Source
AI summary
A method of manufacturing a patterned base member includes forming a resist layer including a positive resist on a base member, exposing a portion of the resist layer to an electron beam to form an exposed portion and an unexposed portion in the resist layer, developing the resist layer to remove the exposed portion and leave the unexposed portion to provide a patterned resist layer, irradiating an entirety of the patterned resist layer with an electron beam, and etching the base member using the patterned resist layer as an etching mask or using a patterned mask layer, to which a pattern of the patterned resist layer is transferred, as an etching mask.