Patterned Dielectric Layers via Selective ALD
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Solution Overview
Problem
Current methods for forming high-quality dielectric layers in thin film devices require either thick single layers for defect mitigation or complex multilayer stacks, which are time-consuming and challenging for field effect devices, and there is a need for a method to easily pattern these layers for device integration.
Innovation Solution
A method involving selective area deposition with atomic layer deposition, using a patterned deposition inhibitor material to control the deposition of inorganic thin film dielectric layers on substrates, allowing for the formation of patterned multi-layer dielectric stacks on large area substrates, including flexible plastics, without the need for high-temperature processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thick single layers are used for defect mitigation, then dielectric quality is improved, but processing time and complexity increase
Solution Approach 1:
The patent divides a thick dielectric layer into multiple thinner layers deposited at different times. Each thin layer can be individually optimized and processed, reducing the processing time compared to depositing one thick layer while still achieving defect mitigation through the multi-layer structure.
Solution Approach 2:
The patent introduces intermediate processing steps between depositing thin layers, including patterned deposition inhibition and surface treatments. These intermediary steps enable better control over each layer's quality and facilitate easier patterning, improving overall dielectric quality without requiring excessively thick layers.
2Reliability
If complex multilayer stacks are used for field effect devices, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies patterned deposition inhibition before depositing subsequent dielectric layers. This preliminary patterning action simplifies the overall manufacturing process by pre-defining where material should be deposited, reducing the need for complex post-deposition patterning steps and aligning better with field effect device requirements.
Solution Approach 2:
The patent employs surface treatments between layer deposits to modify surface properties. These parameter changes in surface chemistry and morphology enable better adhesion and control over subsequent layers, improving device performance while maintaining manufacturing simplicity through controlled parameter adjustments rather than complex structural additions.
3Manufacturing precision
If traditional photolithography is used on plastic substrates, then alignment precision is improved, but substrate compatibility deteriorates
Solution Approach 1:
The patent replaces traditional photolithography with a deposition-based patterning approach using patterned deposition inhibition. This substitution eliminates the need for photolithographic processes that are incompatible with plastic substrates (sensitive to solvents, heat, and swelling), while achieving the necessary alignment precision through controlled material deposition and removal of deposition inhibitors in specific patterns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-quality, patterned dielectric layers with improved device performance and integration ease, suitable for flexible substrates and large-area devices, reducing processing time and complexity.
Implementation Method 1
A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process
Implementation Method 2
A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present
Data Source
AI summary
A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.