Patterned Resist Stress Layer Modification for Semiconductor OPD
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Solution Overview
Problem
Existing methods for managing substrate stress, particularly out-of-plane distortion (OPD), are inefficient and lack adequate spatial resolution to address complex patterns of stress in semiconductor wafers, leading to slow processing rates and improper overlay between device levels.
Innovation Solution
A method involving a stress compensation stack with a patterned resist layer and stress compensation layer, selectively altered based on a substrate's surface map, using energetic beam processing to impart a controlled implant pattern into the stress compensation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If scanning ion beam implantation is used to address complex OPD patterns, then spatial resolution is improved, but processing speed deteriorates
Solution Approach 1:
The patent segments the processing approach by using a patterned resist mask to define discrete regions that require stress modification. Instead of scanning the entire substrate, the ion beam is directed only to specific patterns defined by the resist mask, dividing the complex OPD correction into manageable segmented regions that can be processed more efficiently
Solution Approach 2:
The patent applies preliminary action by first forming a patterned resist mask on the substrate before ion beam implantation. This pre-defined pattern guides the subsequent ion beam processing, eliminating the need for real-time scanning and positioning decisions during implantation, thereby significantly improving processing speed while maintaining the required spatial resolution for complex OPD patterns
2Productivity
If blanket ion implantation is used to address global curvature, then processing speed is improved, but manufacturing precision deteriorates
Solution Approach 1:
The patent applies local quality by using a patterned resist mask to create spatially varying ion implantation profiles. Different regions of the substrate receive different ion doses or no implantation at all, based on the local OPD requirements. This allows precise local control of stress modification while maintaining efficient batch processing speeds through the use of mask-based patterning rather than point-by-point scanning
3Adaptability or versatility
If scanning ion beam is used to generate implant pattern, then adaptability to complex OPD patterns is improved, but device complexity increases
Solution Approach 1:
The patent introduces an intermediary element - a patterned resist mask - that serves as a mediator between the ion beam system and the substrate. The resist mask absorbs the complexity of pattern definition and transfer, allowing the ion beam system to operate in a simpler, more direct manner while still achieving highly adaptable stress modification patterns that match complex OPD distributions
Data Source
AI summary
A method may include providing a stress compensation stack on a main surface of the substrate, wherein the stress compensation stack comprises a patterned resist layer and a stress compensation layer, disposed subjacent the patterned resist layer. The patterned resist layer may be determined according to a surface map of the main surface of the substrate. The method may further include directing processing species to the stress compensation stack, wherein the stress compensation layer is selectively altered as a function of position across the substrate.