Patterned Structure Formation via Mask Decomposition
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Solution Overview
Problem
In semiconductor manufacturing, deviations in pattern transfer during photolithography processes lead to inaccuracies in integrated circuit design due to variations in pattern characteristics, wafer topology, and process parameters, limiting the precision of the final semiconductor device.
Innovation Solution
The method involves decomposing layout patterns with lines elongated in different directions into two masks, performing two photolithography processes to form a patterned structure, where the first mask defines elongated line structures in one direction and the second mask defines structures in another direction, enhancing the similarity between the layout and patterned structures through overlapping regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single photolithography process is used to transfer patterns onto the wafer, then the manufacturing process is simple and efficient, but deviations occur in pattern transfer that jeopardize the performance of the semiconductor device
Solution Approach 1:
The patent divides the pattern transfer process into two separate photolithography processes, each handling different directional components (first lines and second lines) of the layout pattern. This segmentation allows each process to focus on specific pattern orientations, reducing deviations and improving overall pattern transfer accuracy while maintaining reasonable manufacturing efficiency
2Ease of manufacture
If patterns are transferred using conventional photolithography, then the process is straightforward, but the manufactured patterns do not exactly match the layout design
Solution Approach 1:
The layout pattern is segmented into different directional components (first lines elongated in first direction, second lines elongated in second direction), and each segment is processed separately through dedicated photolithography processes. This ensures that each pattern component is transferred with higher fidelity to the original design, improving overall pattern accuracy
Solution Approach 2:
The patent performs preliminary decomposition of the layout pattern into directional components before the photolithography process. By pre-organizing the pattern data into separate mask sets corresponding to different orientations, the subsequent photolithography processes can more accurately reproduce the intended design without deviations
3Device complexity
If integrated circuit design is constrained by photolithography limitations, then the manufacturing process remains simple, but the design capability and performance of semiconductor devices are limited
Solution Approach 1:
By segmenting the pattern transfer into multiple specialized photolithography processes, the system can handle more complex integrated circuit designs with different pattern orientations and densities. Each process is optimized for specific pattern types, enabling greater design flexibility and performance while controlling manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the alignment and similarity between the layout and patterned structures, enhancing the integrity and process window of integrated circuits by aligning ends of line structures and improving the precision of pattern transfer.
Implementation Method 1
the photomask is then manufactured according to the layout pattern. Patterns on the photomask may then be able to be transferred to the semiconductor wafer. The steps mentioned above may be regarded as a photolithographic process.
Implementation Method 2
The first mask includes a plurality of first line patterns corresponding to the first lines and a first block pattern corresponding to the second lines. The second mask includes a plurality of second line patterns corresponding to the second lines and a second block pattern corresponding to the first lines.
Data Source
AI summary
A method for forming a patterned structure includes following steps. First lines elongated in a first direction and second lines elongated in a second direction in a layout pattern are decomposed into two masks. A first mask includes first line patterns and a first block pattern. A second mask includes second line patterns and a second block pattern. Two photolithography processes with the first mask and the second mask are performed for forming a patterned structure including first line structures and second line structures. Each first line structure is elongated in the first direction. The first line structures are defined by a region where the first line patterns and the second block pattern overlap with one another. Each second line structure is elongated in the second direction. The second line structures are defined by a region where the second line patterns and the first block pattern overlap with one another.