Patterned Substrate Processing for High-κ Insulation Layer Etching
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Solution Overview
Problem
Existing methods struggle to efficiently pattern insulation layers made of high-κ materials, which are difficult to etch, in semiconductor device manufacturing.
Innovation Solution
A method using organic hydroxyoxo tin layers as resist materials, irradiated with electromagnetic waves to form patterning layers, followed by selective removal with acid gases, enables efficient patterning of high-κ insulation layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-κ materials are used as insulation layers to increase relative dielectric constant, then gate leakage current is suppressed and integration is improved, but the materials become difficult to etch and pattern
Solution Approach 1:
An organic resist material layer is introduced as an intermediary between the patterning process and the high-κ insulation layer. This resist layer serves as a mediator that enables precise patterning of the difficult-to-etch high-κ material through photolithography and etching processes, resolving the contradiction between maintaining high dielectric constant and achieving ease of patterning
Solution Approach 2:
The patent changes the physical and chemical parameters of the insulation layer by forming a laminated structure with silicon oxide layers around the high-κ material core. This parameter change in the composite structure maintains the high dielectric constant while improving etchability through the silicon oxide components
2Manufacturing precision
If high-κ materials are used as insulation layers, then finer patterns and thinner gate insulation layers are enabled, but direct etching and patterning of these materials is not easy
Solution Approach 1:
The organic resist material layer acts as an intermediary that transfers the desired pattern from the photolithography process to the high-κ insulation layer. This mediator enables fine pattern transfer while protecting the difficult-to-etch high-κ material, resolving the contradiction between achieving fine patterns and maintaining ease of manufacture
Solution Approach 2:
The organic resist material layer is formed in advance before the etching of the high-κ insulation layer. This preliminary action creates a protective mask that guides the subsequent etching process, enabling fine pattern formation while simplifying the manufacturing process for difficult-to-etch materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient patterning of high-κ insulation layers, reducing material costs and ensuring excellent electrical properties in the patterned substrate.
Implementation Method 1
irradiating the first organic hydroxyoxo tin layer with radiation or an electromagnetic wave of a wavelength of 10 to 780 nm and developing the first organic hydroxyoxo tin layer to form a first patterning layer
Implementation Method 2
removing a portion of the electrode layer where the second patterning layer is absent; removing a portion of the first patterning layer where the second patterning layer is absent and a portion of the insulation layer
Data Source
AI summary
An excellent method of manufacturing a patterned substrate which is capable of easily patterning an insulation layer to provide a patterned substrate even when a difficult-to-etch material is used for the insulation layer, a patterned substrate obtained thereby, and a patterned substrate intermediate thereof are provided. The method of manufacturing a patterned substrate with the insulation layer and an electrode layer stacked in this order on a substrate comprising: forming an organic resist material layer; irradiating the organic resist material layer with radiation or an electromagnetic wave of a wavelength of 10 to 780 nm and developing the organic resist material layer to form a first patterning layer; and removing the first patterning layer.