Patterned Substrate Holes for Light Extraction in LED Devices

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Solution Overview

Problem

Current semiconductor light-emitting devices face inefficiencies in light extraction due to waveguide formation between the substrate and semiconductor material, leading to trapped light, which can be addressed by modifying the substrate surface with features and coatings to enhance light transmission and direction control.

Innovation Solution

The substrate features, such as holes with specific orientations and coatings like SiN, form a gradient index optical interface between the semiconductor and substrate, allowing for improved light extraction by scattering and directing emitted light, while minimizing impact on crystal growth quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If a smooth substrate surface is used, then crystal growth quality is maintained, but light extraction efficiency is poor due to waveguide formation

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidcrystal growth quality
Core Design Contradiction:
Loss of energyVSManufacturing precision

Solution Approach 1:

The substrate surface is modified with localized features (holes or grooves) at specific positions rather than being uniformly smooth. These localized modifications create gradient index optical interfaces that scatter light and improve extraction efficiency only in specific regions, while the overall crystal growth quality on the majority of the substrate surface is preserved.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

A gradient index optical interface is introduced as an intermediary between the high refractive index semiconductor material and the substrate. This gradient index layer (with refractive index transitioning from higher near the semiconductor to lower near the substrate) acts as a mediator that reduces total internal reflection and improves light extraction without requiring a completely rough substrate surface that would harm crystal growth.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Loss of energy

If substrate surface features are added to improve light extraction, then light scattering increases, but device complexity increases

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidsubstrate structure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The substrate surface is segmented into multiple discrete features (holes or grooves) arranged in a pattern rather than being a single continuous structure. This segmentation allows for controlled light scattering while maintaining manufacturing feasibility through standard photolithography and etching processes, balancing performance improvement with device complexity management.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach increases light extraction efficiency by scattering trapped light and controlling its direction, reducing energy loss and enhancing the far-field emission of semiconductor light-emitting devices.

Implementation Method 1

This approach increases light extraction efficiency by scattering trapped light and controlling its direction

Methodology Applied
Scientific EffectLight scattering: Scattering

Implementation Method 2

The non-III-nitride material is a stack of layers that forms a gradient index optical interface between the semiconductor and the substrate. The gradient index optical material interface smoothly transitions from a high refractive index to a low refractive index.

Methodology Applied
Scientific EffectRefraction: Refraction

Data Source

PatentEP3149781B1Light-emitting device with patterned substrate
Publication Date: 2020.09.30 LUMILEDS HLDG BV
  • EP3149781B1 patent drawingFigure 1~3
  • EP3149781B1 patent drawingFigure 4~6

AI summary

A lighting device according to embodiments of the invention includes a substrate with a plurality of holes that extend from a surface of the substrate. A non-III- nitride material is disposed within the plurality of holes. The surface of the substrate is free of the non-III-nitride material. A semiconductor structure is grown on the surface of the substrate. The semiconductor structure includes a light emitting layer disposed between an n- type region and a p-type region.