Patterned Susceptor Coating for Uniform MOCVD Wafer Temperature
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Solution Overview
Problem
Existing semiconductor wafer carrier structures face challenges in achieving uniform temperature field distribution during metal-organic chemical vapor deposition (MOCVD) processes, leading to nonuniform wavelength distribution in micro LED devices, which affects yield and production costs.
Innovation Solution
A semiconductor wafer carrier structure with a susceptor featuring a patterned coating film of varying thicknesses and materials, which separates the semiconductor wafer from the susceptor, allowing for precise temperature adjustments and uniform temperature field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mechanical processing is used to adjust the surface depth of the susceptor, then the temperature field distribution can be changed, but it is hard to fine-tune the slight temperature changes due to inherent limitations
Solution Approach 1:
The patent applies local quality by creating a patterned coating film with varying thicknesses (first thickness in first region, second thickness in second region) on the susceptor surface. This allows different local areas to have different thermal properties, enabling precise control of temperature distribution across the wafer surface without requiring complex mechanical processing of the entire susceptor structure.
Solution Approach 2:
The patent uses composite materials by forming a coating film with different material composition than the susceptor substrate. This coating film, having different thermal conductivity and heat capacity characteristics, enables fine-tuning of temperature fields through controlled deposition processes rather than mechanical removal, providing better manufacturing precision and flexibility.
2Reliability
If the temperature field distribution of the carrier structure is not uniform, then the wavelength distribution of micro LED devices becomes nonuniform, but achieving uniform temperature distribution requires complex structure modifications
Solution Approach 1:
The patterned coating film creates local quality variations on the susceptor surface with different thickness regions that correspond to different thermal characteristics. This allows the carrier structure to maintain a simple overall form while achieving uniform temperature distribution across the wafer, thereby ensuring wavelength uniformity without increasing device complexity.
Solution Approach 2:
The patent changes physical parameters by controlling the thickness of the coating film in different regions. By adjusting the film thickness parameter (first thickness vs. second thickness), the thermal properties of the susceptor surface are modified to achieve uniform temperature distribution, thereby ensuring consistent wavelength output across micro LED devices.
3Manufacturing precision
If a patterned coating film with varying thickness is formed on the susceptor, then precise temperature adjustments are enabled, but the manufacturing process becomes more complex
Solution Approach 1:
The patterned coating film implements local quality by having different thicknesses in different regions (first region with first thickness, second region with second thickness). This allows precise temperature control in each region through the thermal properties of the coating, achieving high manufacturing precision while maintaining a relatively simple overall structure that can be fabricated using standard deposition techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of micro LED chips with consistent light-emitting wavelengths, improving yield and reducing production costs by fine-tuning temperature differences and achieving uniform temperature field distribution.
Implementation Method 1
a patterned coating film formed on the upper surface and configured to directly face a semiconductor wafer. The patterned coating film has two or more different thicknesses... so that the semiconductor wafer is at least locally separated from the patterned coating film due to the pattern
Implementation Method 2
the upper surface is a planar surface... configured to directly face a semiconductor wafer... heater disposed below the semiconductor wafer carrier structure for heating the semiconductor wafer carrier structure
Implementation Method 3
a protective film covering the surface, and a susceptor disposed on the carrier body and having an upper surface... The patterned coating film has two or more different thicknesses and is with a pattern, so that the semiconductor wafer is at least locally separated from the patterned coating film
Data Source
AI summary
A semiconductor wafer carrier structure includes a carrier body having a surface, a protective film covering the surface, and a susceptor disposed on the carrier body and having an upper surface. The upper surface is a planar surface. The semiconductor wafer carrier structure further includes a patterned coating film formed on the upper surface and configured to directly face a semiconductor wafer. A material of the patterned coating film is different from the susceptor. The patterned coating film has two or more different thicknesses and is with a pattern, so that the semiconductor wafer is at least locally separated from the patterned coating film due to the pattern. The patterned coating film is continuously and entirely distributed on the upper surface of the susceptor toward the semiconductor wafer, and the upper surface of the susceptor is separated from the semiconductor wafer by the patterned coating film.