Patterned Through-Dielectric Vias for High-Density Interconnects
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Solution Overview
Problem
Current interconnect technologies in semiconductor packaging, such as 2.5D and 3D architectures, suffer from low vertical and horizontal interconnect density, leading to performance degradation and increased manufacturing costs due to the use of solder-based connections, which are not optimized for fine pitch connections and result in unused volume in dielectric materials.
Innovation Solution
The implementation of patterned through-dielectric vias (TDVs) and redistribution layers (RDLs) with silicon-level interconnect density, allowing for high-density electrical coupling between IC dies and package substrates using conductive traces within dielectric material, enabling sub-10 micrometer pitch interconnects and optimizing manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If solder-based connections are used in current interconnect technologies, then ease of manufacture is improved, but interconnect density deteriorates and manufacturing precision worsens due to inability to achieve fine pitch connections
Solution Approach 1:
The patent changes the fundamental parameters of the interconnect system by replacing solder-based connections with copper-based TDVs and RDLs. This involves changing the material composition (from solder to copper), the connection geometry (from spherical bumps to vias and traces), and the pitch scale (from millimeter to sub-10 micrometer range), thereby achieving both high manufacturing precision and improved ease of manufacture through standardized semiconductor processes
Solution Approach 2:
The patent substitutes the mechanical soldering process with a semiconductor fabrication-based system. Instead of using mechanical solder bumps that require alignment and reflow processes, the invention uses TDVs formed through dielectric materials with copper traces, created through photolithography, etching, and electroplating processes, thereby achieving finer pitch and higher density
2Adaptability or versatility
If 2.5D and 3D architectures are used, then device integration is improved, but interconnect density deteriorates due to low vertical and horizontal connection density
Solution Approach 1:
The patent extends the interconnect architecture into the vertical dimension through TDVs that penetrate through dielectric layers, enabling three-dimensional stacking of IC dies. This vertical dimension addition allows high-density interconnects without increasing horizontal footprint, thereby maintaining device integration versatility while achieving high interconnect density
Solution Approach 2:
The patent implements a nested structure where TDVs are embedded within dielectric material layers, and RDLs are embedded within the same dielectric layers. This nesting approach allows multiple interconnect layers to be stacked vertically, achieving high density while maintaining the integrated package structure
3Manufacturing precision
If patterned TDVs and RDLs with sub-10 micrometer pitch are implemented, then interconnect density is improved, but device complexity increases due to manufacturing process complexity
Solution Approach 1:
The patent creates a universal interconnect platform where TDVs and RDLs can be used for multiple functions including signal transmission, power distribution, and ground connections. This multi-functionality reduces the need for separate specialized interconnect structures, thereby achieving high interconnect density without proportionally increasing device complexity
Solution Approach 2:
The patent segments the interconnect system into distinct functional components: TDVs for vertical connections through dielectric layers, RDLs for horizontal redistribution, and separate signal/power/ground paths. This segmentation allows each component to be optimized independently using standardized processes, reducing overall manufacturing complexity while achieving high density
4Ease of manufacture
If solder-based connections are used, then ease of manufacture is improved, but loss of substance increases due to unused volume in dielectric materials
Solution Approach 1:
The patent changes the geometric parameters of the interconnect system from large spherical solder bumps to small cylindrical TDVs with sub-10 micrometer pitch. This parameter change dramatically reduces the unused dielectric volume between interconnects, achieving more efficient material utilization while maintaining ease of manufacture through standardized fabrication processes
Data Source
AI summary
A microelectronic assembly is provided, comprising: a first plurality of integrated circuit (IC) dies in a first layer; a second plurality of IC dies in a second layer; and a third plurality of IC dies in a third layer, in which: the second layer is between the first layer and the third layer, an interface between two adjacent layers comprises interconnects having a pitch of less than 10 micrometers between adjacent ones of the interconnects, and each of the first layer, the second layer, and the third layer comprises a dielectric material, and further comprises conductive traces in the dielectric material.