Patterned TOPCon Front Contact Structure With Laser Oxide Masking
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Solution Overview
Problem
The front-side structure of N-type Tunnel Oxide Passivated Contact (TOPCon) solar cells affects efficiency, with issues such as high contact resistance and interface defect states, limiting the performance of the solar cell.
Innovation Solution
A method involving laser patterning and oxidation of a polysilicon contact layer to form a patterned silicon oxide mask layer, followed by selective removal of excess amorphous silicon and tunnel layer, allowing for the formation of a patterned TOPCon structure with reduced line width, which reduces contact resistance and improves passivation quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the front-side structure of TOPCon solar cell is optimized, then photoelectric conversion efficiency is improved, but contact resistance increases and interface defect states worsen
Solution Approach 1:
The patent applies local quality by creating a patterned TOPCon structure where the front side has selective contact regions with optimized properties. The laser patterning creates localized areas with different characteristics - regions with reduced contact resistance and improved interface quality, while maintaining high efficiency in active areas. This resolves the contradiction by making different parts of the structure have different optimized properties rather than uniform structure.
Solution Approach 2:
The patent segments the front-side contact structure into patterned regions through laser patterning of the polysilicon contact layer. This segmentation creates distinct functional zones that can independently optimize for low contact resistance in contact areas while maintaining passivation in non-contact areas, thereby improving both efficiency and reducing contact resistance simultaneously.
2Productivity
If the front-side structure of TOPCon solar cell is optimized, then photoelectric conversion efficiency is improved, but interface defect states increase
Solution Approach 1:
The patterned structure creates local quality variations where interface defect states are managed differently in various regions. The laser-patterned areas have optimized interface properties with reduced defect states, while maintaining the necessary contact properties in specific zones. This local optimization resolves the contradiction between efficiency and interface quality.
3Manufacturing precision
If laser patterning is used to reduce line width, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple functions into the laser patterning process - it simultaneously patterns the polysilicon contact layer, controls oxidation, and defines the final contact geometry. By combining these steps into a single laser processing operation, the patent achieves high manufacturing precision while minimizing the increase in device complexity that would result from multiple separate processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the efficiency of TOPCon solar cells by reducing contact resistance and improving passivation quality, increasing open circuit voltage and short circuit current, suitable for mass production with lower costs and fewer process complications.
Implementation Method 1
The amorphous silicon layer is laser annealed to form the first polysilicon contact layer
Implementation Method 2
the amorphous silicon layer is thermally annealed to form the first polysilicon contact layer
Implementation Method 3
The first polysilicon contact layer is laser oxidized to pattern the first polysilicon contact layer and to oxidize a portion of a thickness of the first polysilicon contact layer
Data Source
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AI summary
Embodiments of the present application provide a solar cell structure, a method for manufacturing a solar cell structure, and a solar cell. The method includes: forming a precursor structure on a surface of a base, in which the precursor structure includes a first tunnel layer covering the surface of the base, and an amorphous silicon layer covering a surface of the first tunnel layer; annealing the amorphous silicon layer to form a first polysilicon contact layer; laser oxidizing the first polysilicon contact layer to pattern the first polysilicon contact layer and to oxidize a portion of a thickness of the first polysilicon contact layer to form a patterned silicon oxide mask layer; removing the amorphous silicon layer and/or the first polysilicon contact layer in a region which is not covered by the patterned silicon oxide mask layer; removing the silicon oxide mask layer; and forming a first metal electrode on a surface of a remaining portion of the first polysilicon contact layer.