Patterning Process Control Using Etch Path Tilt Compensation
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Solution Overview
Problem
The manufacturing of semiconductor devices faces challenges in reducing errors such as overlay and critical dimension deviations due to imaging and etching inaccuracies, which affect the performance and accuracy of patterning processes.
Innovation Solution
A method is introduced to control the patterning process by obtaining tilt data from measurements of etching paths and using this data to adjust subsequent patterning processes, thereby reducing errors in overlay and critical dimension deviations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional patterning processes are used without tilt measurement and compensation, then the manufacturing process is simpler and faster, but overlay accuracy and critical dimension precision deteriorate due to etching path deviations
Solution Approach 1:
The patent measures tilt in the etching path beforehand (before subsequent patterning steps) and uses this measured data to pre-adjust patterning parameters such as focus, dose, or alignment for future layers. This preliminary measurement and compensation approach prevents overlay and CD errors before they occur, rather than detecting and correcting them after the fact.
Solution Approach 2:
The patent implements a feedback loop where tilt data from etching path measurements is fed back to control and adjust subsequent patterning processes. The measured tilt information is used to modify patterning parameters for the next layer, creating a closed-loop control system that continuously improves overlay accuracy based on actual process deviations.
2Manufacturing precision
If tilt measurement and compensation processes are implemented, then overlay accuracy and critical dimension precision improve, but measurement and process control complexity increases
Solution Approach 1:
The patent replaces complex mechanical measurement systems with optical or metrology-based methods to measure tilt in the etching path. By using optical interference, scatterometry, or other non-contact measurement techniques, the system achieves precise tilt detection without the mechanical complexity and contact issues associated with traditional mechanical measurement devices.
3Productivity
If etching path tilt is not measured and compensated, then the patterning process is faster and more efficient, but overlay error and pattern placement accuracy worsen
Solution Approach 1:
The patent performs tilt measurement and calculates compensation parameters in advance, before the actual patterning of subsequent layers. This preliminary preparation allows the main patterning process to proceed at high speed using pre-calculated correction values, rather than requiring real-time measurement and adjustment during production.
Solution Approach 2:
The patent applies compensation only to the specific parameters affected by tilt (such as overlay and critical dimension) rather than re-optimizing the entire patterning process. This partial compensation approach achieves the necessary precision improvement without the full complexity and time cost of complete process re-optimization.
Data Source
AI summary
Methods of controlling a patterning process are disclosed. In one arrangement, tilt data resulting from a measurement of tilt in an etching path through a target layer of a structure on a substrate is obtained. The tilt represents a deviation in a direction of the etching path from a perpendicular to the plane of the target layer. The tilt data is used to control a patterning process used to form a pattern in a further layer.