Patterning System Design Using Fidelity Simulation

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Solution Overview

Problem

Conventional lithography techniques face challenges in achieving satisfactory patterning results due to the limitations of focusing properties, such as focal point size, depth of focus, and working distance, which are not adequately addressed by existing methods like PREVAIL and LEEPL, leading to suboptimal pattern formation and substrate damage.

Innovation Solution

A method that incorporates patterning fidelity into the design of a patterning system by simulating and adjusting exposure and design parameters, including electrode thickness, lens diameters, and voltages, to optimize the patterning system's performance and ensure alignment with target specifications, such as critical dimensions and line edge roughness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If high-energy electron beam is used in lithography, then the electron dispersion in photoresistor is reduced, but the photoresistive sensitivity decreases and substrate damage increases

Engineering Contradiction:
Improvepattern resolutionVSAvoidphotoresistive sensitivity
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the acceleration voltage parameter from conventional high energy (100 kV) to low energy (2 kV), which fundamentally alters the electron-beam interaction characteristics with the photoresistor and substrate, achieving both high resolution and high sensitivity simultaneously

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If only focusing properties of electron beam are adjusted, then the focal point characteristics are optimized, but the overall patterning fidelity remains insufficient

Engineering Contradiction:
Improvefocal point sizeVSAvoidpatterning fidelity
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent segments the design parameters into multiple independent categories (acceleration voltage, condenser lens parameters, objective lens parameters, aperture parameters) and optimizes each separately through systematic simulation, allowing comprehensive control over patterning fidelity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary simulation and optimization of design parameters before actual pattern formation, using computational models to predict and adjust patterning fidelity, thereby avoiding trial-and-error experimentation

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures that the patterning system meets the desired fidelity specifications, reducing fabrication costs and improving the accuracy and reliability of pattern formation, while minimizing substrate damage.

Implementation Method 1

a high-energy electron beam with an acceleration voltage of about 100 kV is passed through part of a mask and projected onto a photoresistor

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Implementation Method 2

the higher an electron acceleration voltage is, the less dispersed the electrons in a photoresistor are

Methodology Applied
Scientific EffectElectron scattering: Scattering

Data Source

PatentUS8490033B2Method and apparatus for designing patterning system based on patterning fidelity
Publication Date: 2013.07.16 NAT TAIWAN UNIV
  • US8490033B2 patent drawing
  • US8490033B2 patent drawing
  • US8490033B2 patent drawing

AI summary

A method which directly incorporates patterning fidelity into the design of a patterning system is provided. A production result of a target pattern is simulated according to a set of design parameters to obtain a simulated pattern. The target pattern is compared with the simulated pattern to obtain a patterning fidelity, and the values of the set of design parameters of the patterning system are adjusted according to a target patterning fidelity to optimize the values of the set of design parameters of the patterning system.