Patterning Layer Trimming With Angled Radical Ribbon Beams
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Solution Overview
Problem
Advanced three-dimensional semiconductor structures with complex surface topology face challenges in patterning due to incorrect tip-to-tip distances in trenches or vias, leading to incomplete overlap and variable contact resistance, which current EUVL techniques struggle to address effectively, especially in achieving precise angle control of reactive neutral species.
Innovation Solution
A directional radical ribbon beam process is employed using a collimated beam of zero to low-energy radicals generated in a separate plasma chamber, allowing for precise angular control and directional processing of patterning layers, eliminating the need for additional EUV patterning steps by directing the beam at angles from 0 to 85 degrees off normal to the wafer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUVL double patterning is used to correct tip-to-tip distance, then manufacturing precision is improved, but device complexity and processing time increase
Solution Approach 1:
The patent extracts the angle control function from the EUV lithography system by using a separate plasma source to generate reactive neutral species. This allows the patterning correction to be performed independently with precise angular control, eliminating the need for complex EUV double patterning processes while achieving the desired tip-to-tip distance precision.
Solution Approach 2:
The patent changes the parameter of angle control from being difficult to achieve in EUV systems to being precisely controllable through the plasma-generated reactive neutral species approach. By generating radicals at a separate plasma source and directing them at controlled angles, the system achieves precise angular distribution that was not feasible with conventional EUV lithography.
2Manufacturing precision
If angled beam of reactive neutral species is used for pattern correction, then manufacturing precision is improved, but angle control precision deteriorates
Solution Approach 1:
The patent segments the process into two independent parts: plasma generation in a separate source chamber and substrate processing in the main chamber. This segmentation allows independent optimization of each function - the plasma source can be designed specifically for generating reactive neutrals with controlled angular distribution, while the substrate chamber handles the actual patterning correction, thereby achieving both good pattern correction and precise angle control.
Solution Approach 2:
The patent introduces an intermediary plasma source that generates reactive neutral species between the EUV lithography system and the substrate. This intermediary component acts as a mediator that converts the EUV-patterned features into precisely angled radical beams, enabling accurate angular control that cannot be achieved directly with EUV lithography alone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control of critical dimensions and contact hole elongation, reducing the need for additional EUV patterning steps and ensuring accurate patterning without affecting dielectric hardmask layers, thereby improving semiconductor structure integrity and reducing device failure rates.
Implementation Method 1
A directional radical ribbon beam process is employed using a collimated beam of zero to low-energy radicals generated in a separate plasma chamber
Data Source
AI summary
Disclosed are approaches for forming semiconductor patterning features. One method may include providing a plurality of openings through a patterning layer of a semiconductor device, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, and wherein the patterning layer is a resist layer or a carbon-based layer. The method may further include removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall, wherein the beam of neutral reactive radicals is directed at a non-zero angle relative to a perpendicular extending from an upper surface of the patterning layer.