Patterning Process Configuration for Orientation Consistency
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Solution Overview
Problem
Lithographic processes face challenges in maintaining patterning consistency when rotating design layouts or mask patterns, particularly between different orientations, leading to inconsistencies in pattern performance and difficulty in matching source performance across different configurations.
Innovation Solution
A method is introduced to configure a patterning process by simulating a first set of contours for a design layout in a specific orientation and adjusting design variables for a second orientation, ensuring that the second set of contours matches the desired threshold with the first set, involving modifications to illumination source, mask, and resist process parameters, while maintaining performance metrics within acceptable limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a design layout is rotated to a different orientation for patterning, then the substrate can be patterned with different layout orientations, but the patterning performance and contour consistency deteriorate
Solution Approach 1:
The patent applies parameter changes by adjusting illumination source parameters (such as illumination angle, numerical aperture, and source shape) and patterning process parameters (such as focus, dose, and resist development conditions) when the design layout orientation changes. This ensures that the aerial image contours and patterning performance remain consistent across different layout orientations by dynamically modifying the imaging parameters to compensate for orientation-dependent optical effects.
2Manufacturing precision
If illumination source parameters are adjusted for different layout orientations, then patterning performance consistency can be maintained, but the complexity of source configuration increases
Solution Approach 1:
The patent implements preliminary action by pre-calculating and storing optimal illumination source parameters and patterning process parameters for different layout orientations in a lookup table or database. When a layout orientation change is detected, the system automatically retrieves the pre-determined parameters without requiring real-time optimization, thereby maintaining patterning consistency while minimizing the operational complexity of source configuration.
3Measurement precision
If design variables are adjusted to match contours between orientations, then contour matching accuracy improves, but the time required for process configuration increases
Solution Approach 1:
The system performs preliminary contour simulations and stores optimal design variable settings (such as mask bias, illumination conditions, and focus parameters) for different layout orientations in advance. When configuring a new patterning process, the system retrieves these pre-optimized parameters based on the detected layout orientation, achieving high contour matching accuracy without requiring time-consuming real-time optimization calculations.
Solution Approach 2:
The patent uses copying by transferring the optimal parameter sets from pre-simulated reference orientations to the current layout orientation. Instead of performing complete simulations from scratch, the system copies and adapts proven parameter configurations, significantly reducing the time required to achieve accurate contour matching while maintaining high precision through the use of orientation-specific parameter templates.
Data Source
AI summary
Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first orientation. The contours satisfy a design specification associated with the design layout and correspond to a first set of process window conditions. A second patterning process is configured based on a second orientation of the design layout, the first set of process window conditions and the first set of contours. The second patterning process is associated with one or more design variables (e.g., illumination, mask pattern) that affect a second set of contours. The configuring includes adjusting one or more design variables until the second set of contours are within a desired matching threshold with the first set of contours.