Patterning Semiconductor Oxides on Non-Planar Surfaces via Elastomeric Stamping

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Solution Overview

Problem

Existing methods for patterning semiconductor oxides, such as indium tin oxide, on non-planar surfaces are limited due to material brittleness and adhesion issues, leading to low yield and poor performance, especially when attempting to form devices with two-dimensional curvature.

Innovation Solution

A method involving a strike layer and patterned second layer applied via stamping, where the second layer protects the first layer during a subtractive process, allowing for the patterning of semiconductor oxides on both planar and non-planar substrates, including those with two-dimensional curvature, using an elastomeric stamp at controlled temperatures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a flexible substrate is deformed into a desired configuration after material deposition, then arbitrary-shaped devices can be formed, but the substrate and/or any layers deposited on the substrate may be damaged or destroyed

Engineering Contradiction:
Improveability to form arbitrary-shaped devicesVSAvoidsubstrate and layer integrity
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The substrate is deformed into the desired non-planar configuration before material deposition occurs. This preliminary deformation allows the substrate to be in its final shape when materials are deposited, eliminating the need for post-deposition deformation that would damage the substrate or deposited layers. The elastomeric stamp is also pre-deformed to match the substrate geometry before application.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The substrate material properties are changed by selecting materials that can withstand the required deformation. The patent uses flexible substrates and elastomeric stamps with appropriate mechanical properties that allow deformation to the desired configuration while maintaining structural integrity during and after the deposition process.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If conventional patterning methods are used on non-planar substrates, then standard fabrication processes can be applied, but the material brittleness and adhesion issues lead to low yield and poor performance

Engineering Contradiction:
Improveapplicability of standard fabrication processesVSAvoidfabrication yield
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

An elastomeric stamp is introduced as an intermediary tool to transfer the pattern onto the non-planar substrate. The stamp acts as a mediator that can conform to the substrate's three-dimensional geometry, allowing standard patterning techniques to be adapted for complex surfaces without directly exposing the brittle semiconductor oxide layers to mechanical stress during patterning.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The pattern is first created on a planar elastomeric stamp, which is then deformed and applied to the non-planar substrate. This copying approach allows the pattern to be transferred without directly manipulating the fragile deposited layers on the complex geometry substrate, thereby improving yield while maintaining ease of manufacture.

Inventive Principle:
Principle #26Copying

3Adaptability or versatility

If photolithography is used to pattern transparent conductive oxides on non-planar surfaces, then conventional patterning techniques can be employed, but the process becomes complex and less effective for three-dimensional geometries

Engineering Contradiction:
Improvecapability to pattern non-planar surfacesVSAvoidpatterning process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The complex multi-step photolithography process is replaced with a simpler mechanical stamping process. Instead of using photoresist coatings, exposure, development, and etching steps, the pattern is directly transferred mechanically through the elastomeric stamp, significantly reducing process complexity while maintaining adaptability to non-planar surfaces.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

Instead of applying patterned photoresist onto the non-planar substrate and then performing etching, the invention inverts the approach by first creating the pattern on a stamp and then transferring it directly to the substrate. This reversal eliminates the need for photoresist and complex chemical processing steps on the three-dimensional geometry.

Inventive Principle:
Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the successful patterning of transparent conductive oxides on non-planar surfaces with increased responsivity, as demonstrated by passive matrix organic photodetector focal plane arrays on flat and hemispherical surfaces, improving device performance and adaptability to complex geometries.

Implementation Method 1

A patterned second layer is applied over the first layer via stamping

Methodology Applied
Scientific EffectAdhesion: Adhesive

Implementation Method 2

using an elastomeric stamp at controlled temperatures

Methodology Applied
Scientific EffectElasticity: Elasticity

Implementation Method 3

The second portion of the first layer is removed via a subtractive process while the first portion of the first layer is protected from removal by the patterned second layer

Methodology Applied
Scientific EffectEtching:

Data Source

PatentUS9793481B2Patterning by stamped metal resist
Publication Date: 2017.10.17 THE RGT UNIV OF MICHIGAN
  • US9793481B2 patent drawing
  • US9793481B2 patent drawing
  • US9793481B2 patent drawing

AI summary

A method is provided. A first layer is provided over a substrate, the first layer comprising a first material. A patterned second layer is applied over the first layer via stamping. The second layer comprising a second material. The second layer covers a first portion of the first layer, and does not cover a second portion of the first layer. The second portion of the first layer is removed via a subtractive process while the first portion of the first layer is protected from removal by the patterned second layer.