Patterning Support System for Semiconductor Alignment Deviation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High stacking of semiconductor devices leads to positional deviations in pattern alignment due to stress, which existing alignment technologies are unable to effectively cope with.
Innovation Solution
A patterning support system that includes an absolute position measuring device, a substrate profile measuring device, a misalignment inspecting device, a correction executing device, and a control device to measure and correct positional deviations by converting measured data into position correction parameters for the patterning device, reticle position revising device, and reticle drawing device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high stacking of semiconductor devices is performed, then device integration density is improved, but positional deviation of patterns occurs due to stress
Solution Approach 1:
The system performs preliminary measurement of substrate profile and absolute positions before patterning, calculates correction parameters in advance, and applies them to predict and correct positional deviations caused by high stacking stress, thereby maintaining alignment accuracy despite increased device density
Solution Approach 2:
The system measures actual positional deviations using absolute position measurement and misalignment inspection, feeds this information back to calculate correction parameters, and adjusts subsequent patterning operations to compensate for stress-induced deviations, creating a closed-loop control system that maintains precision in high stacking conditions
2Manufacturing precision
If conventional alignment technology is used, then shot area alignment is achieved, but positional deviation caused by stress cannot be coped with
Solution Approach 1:
The system transitions from conventional 2D shot area alignment to 3D spatial correction by measuring substrate profile (height dimension) and absolute positions, calculating correction parameters that account for out-of-plane deformations and stress-induced warping, thereby extending alignment capability to handle three-dimensional substrate variations
Solution Approach 2:
The system replaces conventional mechanical alignment methods with optical measurement techniques (absolute position measurement, misalignment inspection) and computational correction, substituting physical adjustment mechanisms with measurement-calculation-correction workflow that can accurately compensate for stress-induced deviations without mechanical intervention
3Manufacturing precision
If multiple measurement and correction devices are added, then alignment accuracy is improved, but system complexity increases
Solution Approach 1:
The control device serves multiple functions: it controls the patterning device, processes substrate profile measurement data, calculates correction parameters based on absolute position and misalignment data, and manages the reticle position revising device, thereby consolidating multiple functions into a single control system that improves alignment accuracy without proportionally increasing overall system complexity
Data Source
AI summary
According to one embodiment, a patterning support system includes an absolute position measuring device that measures absolute positions with respect to absolute coordinates, of a first pattern formed in a shot area of a substrate and a second pattern to be transferred to the substrate while being overlayed on the first pattern, a substrate profile measuring device that measures a global positional deviation amount of the substrate, a misalignment inspecting device that measures a misalignment amount of the second pattern with respect to the first pattern, a correction executing device that corrects the position of the second pattern with respect to the first pattern, and a control device that calibrates the absolute positions measured by the absolute position measuring device, using at least one of the global positional deviation amount and the misalignment amount, and converts the calibrated absolute positions into a position correction parameter to be used when the position of the second pattern is corrected by the correction executing device.