PbS Quantum Dot Photoelectric Element with High Tg Interfacial Layer
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Solution Overview
Problem
Conventional photoelectric conversion devices suffer from residual images and lack heat resistance due to inadequate consideration of manufacturing processes, particularly in photoelectric conversion films with quantum dots.
Innovation Solution
A photoelectric conversion element is designed with a PbS quantum dot photoelectric conversion layer, an organic interfacial layer having a glass transition temperature of 100°C or higher, and specific mobility ratios, enhancing heat resistance and reducing residual images by optimizing the interfacial layers and electrode configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a photoelectric conversion film with quantum dots is used, then photosensitivity in long wavelength region is improved, but residual images occur and heat resistance is reduced
Solution Approach 1:
An interfacial layer comprising an organic compound is introduced between the photoelectric conversion layer containing quantum dots and the electrode. This interfacial layer acts as a mediator that prevents direct contact between the quantum dot film and electrode, thereby improving heat resistance and reducing residual images while maintaining the photosensitivity benefits of quantum dots.
Solution Approach 2:
The patent specifies that the organic compound in the interfacial layer must have a glass transition temperature of 100°C or higher and a hole mobility satisfying μhEBL≥1.0×10−3 (cm2/Vs). By controlling these physical parameters of the interfacial layer material, the device achieves improved heat resistance and reduced residual images while preserving quantum dot photosensitivity.
2Use of energy by moving object
If a carrier transportation layer is provided between photoelectric conversion layer and electrode, then photoelectric conversion efficiency is improved, but device complexity increases
Solution Approach 1:
The interfacial layer comprising an organic compound performs multiple functions simultaneously: it serves as a carrier transportation layer to maintain photoelectric conversion efficiency, as a heat resistance enhancement layer, and as a residual image reduction layer. This multi-functionality eliminates the need for separate carrier transportation layers, thereby reducing device complexity.
Solution Approach 2:
The patent merges the functions of the carrier transportation layer and the heat resistance layer into a single interfacial layer. By combining these functions in one layer rather than using separate layers, the device structure is simplified while maintaining all necessary functionalities.
3Object-generated harmful factors
If interfacial layer with high hole mobility is used, then residual images are reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies precise parameter ranges for the organic compound in the interfacial layer: glass transition temperature of 100°C or higher and hole mobility μhEBL≥1.0×10−3 (cm2/Vs). By defining these specific parameter thresholds, the patent provides clear manufacturing guidelines that balance residual image reduction with achievable manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces residual images and improves heat resistance, as demonstrated by the enhanced hole mobility and external quantum efficiency, making it suitable for high-performance imaging applications.
Implementation Method 1
a photoelectric conversion layer having a quantum dot; wherein the quantum dot is a PbS quantum dot
Implementation Method 2
the first interfacial layer has an organic compound having a glass transition temperature of 100° C. or higher, and the following Equation (1) is met: μhEBL≥1.0×10−3 (cm2/Vs)
Data Source
AI summary
A photoelectric conversion element that reduces a residual image while enhancing heat resistance and includes a first electrode; a photoelectric conversion layer; a first interfacial layer; and a second electrode in this order, the photoelectric conversion layer has a quantum dot, the quantum dot is a PbS quantum dot, the first interfacial layer has an organic compound having a glass transition temperature of 100°° C. or higher, and the following Equation (1) is met: μhEBL≥1.0×10−3 (cm2/Vs) . . . (1), where μhEBL denotes hole mobility of the first interfacial layer.