Phase Change Memory Deposition Source Segmentation
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Solution Overview
Problem
In phase change memory (PRAM) device manufacturing, existing methods face challenges in forming thin layers with high deposition rates and minimizing particle generation, particularly when using chalcogenide compounds like GeSbTe, due to instability and excessive tellurium atom separation during the deposition process.
Innovation Solution
A method involving a first deposition source without tellurium and a second deposition source with specific tellurium precursors (Te(CH(CH3)2)2) is used, where the second precursor is included in an amount less than 1% by weight, and provided at a temperature below 120°C, to form a phase change material layer using chemical vapor deposition or atomic layer deposition processes, activating a reaction with a reaction gas to enhance deposition rate and reduce particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional deposition source containing tellurium is used to form phase change material layer, then the deposition rate can be maintained, but excessive particle generation occurs due to tellurium atom separation and instability
Solution Approach 1:
The deposition source is segmented into two separate sources: a first deposition source containing GeSb compound without tellurium, and a second deposition source containing tellurium precursor. This segmentation prevents tellurium atom separation and particle generation while maintaining high deposition rate, as each source is stable and independent.
Solution Approach 2:
A reaction gas serves as an intermediary that facilitates the reaction between the first deposition source (GeSb compound) and the second deposition source (tellurium precursor) to form the phase change material layer. This intermediary approach allows controlled deposition without direct contact between unstable tellurium-containing compounds, reducing particle generation.
2Manufacturing precision
If tellurium is included in the deposition source, then the phase change material layer can be formed with correct composition, but the deposition source becomes unstable and generates particles
Solution Approach 1:
The deposition source is divided into two stable components: GeSb compound in the first source and tellurium precursor in the second source. Each component is individually stable, eliminating the instability and particle generation associated with conventional single-source tellurium-containing deposition materials, while still achieving correct GeSbTe composition through their combined reaction.
Solution Approach 2:
The tellurium precursor in the second deposition source is maintained at a low concentration (less than 1% by weight) and introduced at controlled temperature (below 120°C). These parameter changes ensure the tellurium precursor remains stable during storage and transport, preventing premature decomposition and particle generation, while still providing sufficient tellurium for correct layer composition.
3Productivity
If the second tellurium precursor is included in higher amounts, then the deposition rate increases, but particle generation and deterioration increase
Solution Approach 1:
The second tellurium precursor is optimized at a specific low concentration (less than 1% by weight) and introduced at controlled temperature (below 120°C). These parameter optimizations maintain adequate deposition rate by ensuring stable precursor delivery, while simultaneously minimizing particle generation and deterioration by preventing precursor decomposition and excessive tellurium atom separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes the deposition source, maintains a high deposition rate, and prevents excessive particle generation, thereby improving the formation of thin layers and phase change memory devices with enhanced gap-fill characteristics and reduced deterioration.
Implementation Method 1
providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor
Implementation Method 2
providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate
Implementation Method 3
providing a reaction gas onto the substrate prior to providing the first deposition source onto the substrate, the reaction gas activating a reaction between the first deposition source and the second deposition source
Data Source
AI summary
A method of forming a thin layer and a method of manufacturing a phase change memory device, the method of forming a thin layer including providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor represented by the following Formula 1 and a second tellurium precursor represented by following the Formula 2:Te(CH(CH3)2)2 Formula 1Ten(CH(CH3)2)2 Formula 2wherein, in Formula 2, n is an integer greater than or equal to 2.