Phase Change Material Pockets for Stacked Semiconductor Thermal Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Stacked semiconductor chip arrangements face challenges in thermal management due to non-planar configurations, leading to inadequate heat dissipation and limitations in power and size, especially for lowermost dies, which can result in thermal runaway or hinder electrical testing at operational power levels.
Innovation Solution
Incorporating a phase change material (PCM) in pockets associated with the semiconductor chips to absorb and store heat, facilitating effective heat management within the stack, with the PCM undergoing a physical phase change to absorb heat during operation and release it during periods of reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If stacked semiconductor chip arrangement is used to increase integration density, then productivity and device functionality are improved, but thermal management becomes inadequate leading to thermal runaway
Solution Approach 1:
The patent divides the thermal management function by placing individual heat dissipation structures (heat dissipation fins, phase change material pockets, thermal vias) at each semiconductor chip level rather than using a single centralized cooling system. This segmentation allows each chip to be thermally managed independently, addressing the heat accumulation problem in stacked configurations.
Solution Approach 2:
The patent transitions from planar (2D) heat dissipation to three-dimensional (3D) heat dissipation by incorporating vertical heat dissipation pathways through the stack. Heat dissipation fins extend upward from each chip, and thermal vias conduct heat vertically through the substrate, adding a vertical dimension to thermal management in the stacked architecture.
2Adaptability or versatility
If non-planar configuration is used for stacked chips, then device functionality is improved, but thermal contact between solder material, chip and heat spreader becomes inadequate
Solution Approach 1:
The patent introduces phase change material as an intermediary substance between the semiconductor chip and the heat spreader. This material undergoes phase transition (solid to liquid) to conform to the non-planar surfaces, ensuring complete thermal contact and filling gaps that would otherwise exist in stacked chip configurations.
Solution Approach 2:
The patent utilizes the physical parameter change of the phase change material during phase transition. The material changes from solid to liquid state, altering its shape and volume to adapt to the non-planar configuration, thereby maintaining optimal thermal contact under varying operational conditions.
3Measurement precision
If lower heat dissipating dice are stacked on high heat dissipating die, then electrical testing capability is improved, but thermal runaway risk increases
Solution Approach 1:
The patent implements preliminary thermal management measures by incorporating heat dissipation structures and phase change material pockets at each chip level before operation. This proactive thermal management prevents heat accumulation that could lead to thermal runaway during electrical testing at operational power levels.
Solution Approach 2:
The phase change material acts as a thermal cushioning mechanism that absorbs excess heat before it can propagate through the stack. The material is positioned in advance to provide thermal buffering capacity, protecting the stacked chips from thermal runaway during high-power electrical testing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of phase change materials enhances thermal management by absorbing and storing heat within the stack, preventing thermal runaway and enabling efficient electrical testing of semiconductor chips at operational power levels, thereby improving the performance and reliability of stacked semiconductor chip devices.
Implementation Method 1
a first portion of a phase change material positioned in a first pocket associated with the first semiconductor chip or the second semiconductor chip to store heat generated by one or both of the first and second semiconductor chips
Implementation Method 2
the PCM undergoing a physical phase change to absorb heat during operation and release it during periods of reduced power consumption
Data Source
AI summary
Various stacked semiconductor chip arrangements and methods of manufacturing the same are disclosed. In one aspect, an apparatus is provided that includes a first semiconductor chip, a second semiconductor chip mounted on the first semiconductor chip, and a first portion of a phase change material positioned in a first pocket associated with the first semiconductor chip or the second semiconductor chip to store heat generated by one or both of the first and second semiconductor chips.