Phase Change Material for Semiconductor Hotspot Dissipation
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Solution Overview
Problem
Current semiconductor power devices face issues with heat dissipation due to current filaments, which can lead to hotspots and device destruction under extreme conditions.
Innovation Solution
Incorporating a phase change material (PCM) with a solid-solid phase transition temperature between 150° C and 400° C into the semiconductor device, particularly in electrical connections and as part of transistor cells and diodes, to effectively dissipate heat and prevent hotspot formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor power devices operate under extreme conditions, then current filaments occur causing hotspots, but device destruction occurs
Solution Approach 1:
The patent incorporates a phase change material (PCM) layer in the electrical connection that undergoes solid-solid phase transition at a specific temperature range (150-400°C). During normal operation, the PCM remains in a low-resistance crystalline state, allowing efficient current flow. When a hotspot forms and temperature reaches the phase transition point, the PCM transforms to a high-resistance amorphous state, automatically limiting current flow and dissipating the hotspot, thus preventing device destruction while maintaining reliability.
Solution Approach 2:
The invention changes the electrical resistance parameter of the electrical connection dynamically through phase transition. The PCM layer transitions from a low-resistance state during normal operation to a high-resistance state during overheating conditions, automatically adjusting the electrical parameters to prevent device failure without requiring external control systems.
2Temperature
If phase change material is added to electrical connections, then heat dissipation improves, but device complexity increases
Solution Approach 1:
The patent merges the phase change material layer with the existing electrical connection structure (such as aluminum or copper interconnects). The PCM is integrated directly into the electrical pathway without requiring separate heat dissipation components, thus improving heat dissipation capability while minimizing increases in device complexity. The dual function of electrical conduction and thermal management is achieved through this merged structure.
Solution Approach 2:
The phase change material serves multiple functions simultaneously: it acts as an electrical conductor during normal operation and as a thermal management element during overheating conditions. This multi-functionality reduces the need for additional dedicated heat dissipation components, thereby limiting the increase in device complexity while achieving improved heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The PCM absorbs latent heat during phase transition, effectively dissipating heat and preventing hotspots, thereby enhancing the reliability and longevity of semiconductor power devices.
Implementation Method 1
a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.
Implementation Method 2
The PCM absorbs latent heat during phase transition, effectively dissipating heat and preventing hotspots
Data Source
AI summary
A semiconductor device includes a transistor having a plurality of transistor cells in a semiconductor body. Each transistor cell includes a control terminal and first and second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C. The control terminals of the plurality of transistor cells are electrically connected to one another.