Phase Change Memory Write Method Using Voltage Pulse Comparison
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Solution Overview
Problem
The existing write operation methods for phase change memory are inefficient due to the need to read and compare data before writing, which consumes time and reduces the speed of the write operation.
Innovation Solution
A method that generates a voltage pulse signal based on the to-be-written data and applies it to a phase change material, using a voltage divider resistor to determine if the stored data is the same, thereby skipping or performing the write operation without the need for extensive data comparison.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data is read and compared before writing into phase change memory, then data accuracy is improved, but write operation time increases
Solution Approach 1:
The patent applies preliminary action by performing a read operation and comparison before the write operation to determine whether writing is necessary. The controller reads data from the phase change memory, compares it with the to-be-written data, and only proceeds with writing if they differ. This preliminary check ensures data accuracy while avoiding unnecessary write operations that would consume time.
Solution Approach 2:
The patent implements skipping by allowing the write operation to be bypassed when the read data matches the to-be-written data. The controller skips the writing step entirely in such cases, directly reducing write operation time while maintaining data integrity through the preliminary comparison.
2Reliability
If data comparison operations are performed before writing, then data integrity is improved, but operational complexity increases
Solution Approach 1:
The patent merges the read, compare, and write operations into a single integrated write workflow. The controller combines these operations sequentially, using the comparison result to conditionally proceed with writing. This merging approach maintains data integrity through comprehensive checking while managing operational complexity by consolidating steps into a unified process.
Solution Approach 2:
The patent uses feedback by comparing the read data with the to-be-written data and using this comparison result to control whether the write operation should proceed. The feedback mechanism ensures data integrity by verifying data consistency before writing, while the conditional logic based on feedback keeps the operational complexity manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the write operation by reducing the time required for data comparison, thereby improving the efficiency and speed of writing data into the phase change memory.
Implementation Method 1
generating a corresponding voltage pulse signal according to to-be-written data, and applying the voltage pulse signal to a phase change material included in a phase change storage unit
Implementation Method 2
applying the voltage pulse signal to a voltage divider resistor serially connected to the phase change material; comparing voltage values at both ends of a sampling resistor with a threshold voltage
Data Source
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AI summary
The present invention discloses a write operation method and device for a phase change memory and belongs to the computer field. The method includes: when a phase change memory performs a write operation, generating a corresponding voltage pulse signal according to to-be-written data, and applying the voltage pulse signal to a phase change material included in a phase change storage unit corresponding to the to-be-written data and applying the voltage pulse signal to a voltage divider resistor serially connected to the phase change material; comparing voltage values at both ends of a sampling resistor with a threshold voltage to generate an indicator value; determining, according to the indicator value, whether data that is stored in the phase change storage unit and is corresponding to the indicator value is the same as the to-be-written data; and skipping writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data, if the same; or writing the to-be-written data into the phase change storage unit corresponding to the to-be-written data, if different. In the present invention, delay time of writing data into the phase change storage unit is reduced, thereby improving efficiency of a write operation.