Phase Change Memory Strain Transistor SiGe Junction
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Solution Overview
Problem
There is a physical limit to improving the current driving capacity of phase change memory devices, which affects their integration and performance, particularly in the switching device and driving transistors formed on conventional silicon substrates.
Innovation Solution
A phase change memory device is developed with a semiconductor substrate featuring a junction word line formed from a strain stress supplying layer doped with dopants and a strain transistor in the core/peri area, utilizing a SiGe junction region to enhance current driving capacity, along with SiGe switching diodes to reduce resistance and improve carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional silicon substrates and polysilicon gate structures are used, then manufacturing simplicity is maintained, but current driving capacity is limited
Solution Approach 1:
The patent changes the material parameters by introducing SiGe strain stress supplying layers and doping the junction word line with dopants. This modifies the physical properties of the transistor to achieve higher current driving capacity while maintaining compatibility with existing manufacturing processes
Solution Approach 2:
The patent uses composite material structures including SiGe strain stress supplying layers combined with silicon substrates, and junction word lines with doped regions. These composite structures enable enhanced current driving capacity through strain-induced carrier mobility improvement
2Productivity
If integration and performance are improved, then device functionality is enhanced, but current driving capacity requirements increase
Solution Approach 1:
The patent applies local quality enhancement by forming SiGe strain stress supplying layers specifically in the core/peri area and doping the junction word line in the cell area. This localized approach improves current driving capacity where needed without affecting the entire device uniformly
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases current driving capacity, reduces resistance, and lowers operation voltage, thereby enhancing the performance and integration of phase change memory devices by utilizing strain stress and SiGe materials.
Implementation Method 1
a junction word line formed in the cell area of the semiconductor substrate and being comprised of a strain stress supplying layer doped with dopants
Implementation Method 2
a junction word line formed in the cell area of the semiconductor substrate and being comprised of a strain stress supplying layer doped with dopants
Implementation Method 3
the phase change memory device can be driven to reversibly change phases between the amorphous and crystalline states by applying an electrical current (i.e., Joule's heat) across the phase change material
Implementation Method 4
Phase change memory device and method of manufacturing the same
Data Source
AI summary
A phase change memory device having a strain transistor and a method of making the same are presented. The phase change memory device includes a semiconductor substrate, a junction word line, switching diodes, and a strain transistor. The semiconductor substrate includes a cell area and a core/peri area. The junction word line is formed in the cell area of the semiconductor substrate and includes a strain stress supplying layer doped with impurities. The switching diodes are electrically coupled to the junction word line. The strain transistor is formed in the core/peri area of the substrate and acts as a driving transistor.