PEALD Film Formation Method for Precise Composition Control
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Solution Overview
Problem
Existing film formation methods using PEALD struggle to control the composition ratio of the film and impurity content, as changing the precursor type is insufficient to achieve desired film properties.
Innovation Solution
A film forming method involving alternating cycles of processing with material-1 containing one silicon atom per molecule and material-2 with two or more silicon atoms per molecule, where plasma is generated with and without reactant gas to form silicon oxide and double silicon compounds respectively, allowing for precise control of film composition and impurity content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If only the type of precursor is changed to control film density, then film density can be adjusted, but the composition ratio and impurity content cannot be precisely controlled
Solution Approach 1:
The film formation process is segmented into two distinct processing steps within one cycle: first processing uses material-1 (one Si atom per molecule) with reactant gas to form silicon oxide, while second processing uses material-2 (two or more Si atoms per molecule) without reactant gas to form double silicon compound. This segmentation allows independent control of composition ratio and impurity content, resolving the contradiction between manufacturing precision and process complexity.
Solution Approach 2:
The invention changes multiple parameters simultaneously: precursor type (material-1 vs material-2), reactant gas presence (with vs without), and processing sequence. By varying these parameters in a structured alternating cycle, precise control over film composition ratio and impurity content is achieved, transforming the single-parameter control limitation into multi-parameter precision control.
2Manufacturing precision
If alternating processing cycles are used to control film composition, then composition ratio and impurity content can be precisely controlled, but the processing complexity increases
Solution Approach 1:
The invention merges composition control and impurity control into a single integrated alternating cycle process. By combining material-1 processing (for composition) and material-2 processing (for impurity control) in one repeating cycle, multiple control functions are achieved without requiring separate processing stages, thus managing complexity while maintaining precision.
Solution Approach 2:
The processing follows a periodic alternating cycle pattern where first processing and second processing are repeated in sequence. This periodic structure allows systematic control of film properties through cycle repeat count, where each cycle contributes predictably to the final film composition and impurity content, making the complex process controllable and reproducible.
3Manufacturing precision
If more processing cycles are repeated to adjust film properties, then refractive index and other properties can be controlled, but processing time increases
Solution Approach 1:
The invention introduces dynamic control through adjustable cycle repeat count. By varying the number of times the alternating first and second processing are repeated, the film thickness and refractive index can be dynamically adjusted. This dynamic parameter allows flexible optimization between film quality (refractive index control) and processing efficiency (time consumption).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of films with controlled composition ratios and impurity content, improving film quality by adjusting the repeat count of processing cycles, which affects refractive index and other properties like breakdown voltage and stress.
Implementation Method 1
the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate
Implementation Method 2
generates plasma while reactant gas is introduced
Implementation Method 3
the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate
Data Source
AI summary
Examples of a film forming method includes repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate.