PEALD Thin Film Deposition Using High-Frequency Plasma
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to thermal shock and degradation of performance due to high-temperature thin film deposition processes, necessitating a method for depositing uniform thin films at low temperatures while maintaining conformality and preventing damage to lower pattern structures.
Innovation Solution
A plasma-enhanced atomic layer deposition (PEALD) method is employed, involving the sequential supply of a source gas, reactive gas, and plasma at high frequencies (60 MHz or greater), with continuous purge gas and reactive gas supply, and discontinuous plasma application to minimize ion bombardment and enhance radical density, ensuring uniform film deposition on both top and sidewalls of pattern structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high-temperature thin film deposition is used, then film deposition is achieved, but thermal shock and performance degradation occur
Solution Approach 1:
The patent changes the deposition temperature parameter from high temperature to low temperature range, enabling thin film deposition without causing thermal shock and performance degradation to the semiconductor device
Solution Approach 2:
The patent replaces thermal energy with plasma energy for the deposition process. By using plasma-enhanced chemical vapor deposition (PECVD), the method achieves film deposition at low temperatures through plasma activation rather than thermal heating, thus avoiding thermal damage while maintaining deposition capability
2Reliability
If low temperature deposition is used, then thermal damage is prevented, but film uniformity and conformality deteriorate
Solution Approach 1:
The patent optimizes plasma process parameters including power density, pressure, and gas composition to achieve uniform film deposition at low temperatures. By carefully controlling these parameters, the method maintains film uniformity and conformality without requiring high thermal energy
Solution Approach 2:
The patent employs periodic plasma pulsing or alternating gas flow patterns during deposition to enhance film uniformity. The periodic introduction of reactive species ensures consistent film growth across the substrate surface while maintaining low overall temperature
3Productivity
If plasma is continuously supplied, then deposition efficiency is improved, but plasma damage to lower pattern structures increases
Solution Approach 1:
The patent uses discontinuous or pulsed plasma supply instead of continuous plasma. By controlling plasma on/off cycles or using intermittent plasma bursts, the method maintains adequate deposition efficiency while reducing cumulative plasma damage to sensitive lower pattern structures
Solution Approach 2:
The patent dynamically adjusts plasma power and gas flow rates during the deposition process. By modulating plasma conditions in real-time based on process stage and substrate state, the method optimizes deposition efficiency while minimizing harmful plasma effects on pattern structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves uniform thin film deposition with improved conformality and critical dimension uniformity, reducing plasma damage and maintaining film quality, thereby enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
a plasma-enhanced atomic layer deposition (PEALD) method capable of depositing a thin film at low temperature and precisely controlling the deposition
Implementation Method 2
a frequency of the plasma is a high frequency of 60 MHz or greater
Data Source
AI summary
Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.